L-Shaped Source Tunneling Field Effect Transistor Structure
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Solution Overview
Problem
Current tunneling field effect transistors face limitations in increasing tunneling area and probability without increasing integration area or subthreshold swing, which hampers the reduction of device size and power consumption.
Innovation Solution
A tunneling field effect transistor with a new structure featuring a source with at least one 'L'-shaped area, a tunneling region in contact with both 'L' areas, and a gate dielectric layer in contact with the tunneling region, allowing for increased tunneling area and probability while maintaining a small external voltage requirement for high conduction current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a part of a tunneling region is added between source and gate dielectric layer to increase tunneling area, then tunneling current increases, but integration area or subthreshold swing increases
Solution Approach 1:
The source is designed with an L-shaped cross-section, transitioning from a one-dimensional linear contact to a two-dimensional extended contact area. This dimensional change allows the tunneling region to contact both the gate dielectric layer and the source in multiple locations, effectively increasing the tunneling area without proportionally increasing the integration area. The L-shaped source creates additional tunneling paths in the vertical and lateral dimensions simultaneously.
Solution Approach 2:
The tunneling region is positioned within the gate dielectric layer structure, with the L-shaped source nested to contact both the gate dielectric layer and the tunneling region. This nested arrangement allows multiple functional regions (source, tunneling region, gate dielectric layer) to occupy overlapping or adjacent spaces, increasing tunneling area while maintaining compact integration.
2Power
If epitaxial layer and multi-gate structure are used to combine new electric field, then electron tunneling probability increases, but tunneling area remains limited
Solution Approach 1:
The L-shaped source configuration extends the tunneling interface from a single plane to multiple planes, increasing the tunneling area. By creating vertical and lateral extensions of the source contact, the structure provides additional areas where tunneling can occur, complementing the enhanced tunneling probability from the electric field effects.
Solution Approach 2:
The L-shaped source introduces asymmetric geometry to the traditionally symmetric source-drain structure. This asymmetry creates non-uniform electric field distribution and multiple tunneling interfaces, allowing the structure to achieve both high tunneling probability through field enhancement and increased tunneling area through geometric expansion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new structure effectively enhances tunneling current and subthreshold slope, ensuring performance without increasing integration area or channel length, thus addressing the short-channel effect and power consumption challenges.
Implementation Method 1
injection of carriers at a source end of the TFET is based on a tunneling mechanism
Data Source
AI summary
A tunneling field effect transistor with a new structure and a preparation method thereof are provided. The tunneling field effect transistor includes an active region between a source and a drain, a gate dielectric layer, and a gate located on a side of the gate dielectric layer deviating from the source, and a tunneling region disposed between the gate dielectric layer and the source and in contact with both the gate dielectric layer and the source. The source includes at least a first area and a second area perpendicularly connected in an “L” shape. The tunneling region is in contact with at least the first area and the second area. The gate dielectric layer is in contact with at least the tunneling region and the source.