Tunneling Field-Effect Transistor Source Drain Segmentation

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Solution Overview

Problem

The existing fabrication processes for tunneling field-effect transistors (TFETs) are limited in improving the performance due to the simultaneous formation of source and drain regions using the same material and doping properties, which restricts the selection ranges and affects the optimization of TFET performance.

Innovation Solution

A method is developed to form separate doped layers for the source and drain regions using different semiconductor materials and doping ions, allowing independent fabrication processes to enhance the selection ranges and doping properties, thereby improving the performance of TFETs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If separate doped layers with different semiconductor materials and doping ions are used for source and drain regions, then the selection range of materials and doping properties is expanded and TFET performance is optimized, but the fabrication process complexity increases

Engineering Contradiction:

ImproveTFET performanceVSAvoidfabrication process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The source and drain regions are formed as separate doped layers with different semiconductor materials and doping properties, allowing independent optimization of each region's characteristics rather than using uniform material and doping for both regions

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different semiconductor materials and doping concentrations are applied locally to specific regions (source vs. drain) based on their functional requirements, enabling tailored optimization of carrier injection and extraction properties in each region

Inventive Principle:

Principle #3Local quality

2Ease of manufacture

If the same material and doping properties are used for source and drain regions, then the fabrication process is simplified, but the selection range is limited and TFET performance improvement is restricted

Engineering Contradiction:

Improvefabrication process simplicityVSAvoidmaterial selection range

Core Design Contradiction:

Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The fabrication process is segmented into separate steps for forming source and drain doped layers, enabling independent material selection and doping parameter optimization for each region rather than treating them as a single uniform structure

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different semiconductor materials and doping concentrations are used for source and drain regions based on their specific functional requirements, allowing optimization of carrier injection efficiency in the source and carrier extraction in the drain

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS11227919B2Field-effect-transistors

Publication Date: 2022.01.18 SEMICON MFG INT (SHANGHAI) CORP

AI summary

A field-effect-transistor includes forming a fin structure on a substrate, a gate structure formed across each fin structure and covering a portion of top and sidewall surfaces of the fin structure, a first doped layer, made of a first semiconductor material and doped with first doping ions, in each fin structure on one side of the corresponding gate structure, and a second doped layer, made of a second semiconductor material, doped with second doping ions, and having doping properties different from the first doped layer, in each fin structure on another side of the corresponding gate structure.