TFT Active Device Manufacturing with Merged Masking Steps
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Solution Overview
Problem
The conventional manufacturing process of thin-film transistor (TFT) active devices for flat panel displays is complex and costly, requiring multiple masking processes.
Innovation Solution
A simplified method involving sputtering and chemical vapor deposition to form a TFT active device, which includes forming a gate terminal, gate insulation layer, oxide semiconductor layer, protection layers, and a transparent conductive layer, with strategically placed bridging holes to electrically connect components, reducing the number of masking operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masking processes are used to form TFT components, then manufacturing precision is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines multiple masking processes into a single masking step by designing a multi-layer structure where the gate electrode, source/drain electrodes, and pixel electrode are formed simultaneously or in fewer sequential steps. This merging of processes reduces the overall number of masking operations required while maintaining the precision needed for proper TFT component formation and electrical connections.
Solution Approach 2:
The patent segments the conductive layer into different functional regions (gate electrode region, source/drain electrode regions, and pixel electrode regions) that can be differentiated and formed through a reduced number of masking steps. This segmentation allows each functional component to be properly defined while simplifying the overall manufacturing process flow.
2Manufacturing precision
If multiple masking processes are used to form TFT components, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
By merging multiple masking processes into fewer steps, the patent reduces the total cycle time required for TFT manufacturing. The combined approach allows for fewer process interruptions, fewer material deposition cycles, and reduced alignment operations, thereby improving productivity while still achieving the necessary manufacturing precision for functional TFT components.
3Manufacturing precision
If multiple masking processes are used to form TFT components, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent reduces manufacturing cost by merging multiple masking processes into fewer steps, which directly reduces material consumption (fewer photoresist layers, fewer etch chemicals), lowers equipment usage time, and reduces labor costs associated with repeated masking operations. This approach maintains manufacturing precision by carefully designing the combined process to achieve proper component formation and electrical connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process and lowers costs by omitting one masking operation, thereby enhancing the efficiency and reducing the overall expense of producing TFT active devices for liquid crystal display panels.
Implementation Method 1
forming a transparent conductive layer on the second protection layer through sputtering
Implementation Method 2
forming a second protection layer on the first protection layer and the data line electrode through chemical vapor deposition
Data Source
AI summary
The present invention provides a method for manufacturing thin-film transistor active device and a thin-film transistor active device manufactured with the method. The method includes providing a substrate; forming a gate terminal on the substrate through sputtering and masking operations; forming a gate insulation layer on the gate terminal through CVD; forming an oxide semiconductor layer on the gate insulation layer through sputtering and masking operations; forming a first protection layer on the oxide semiconductor layer through CVD, forming a metal layer on the first protection layer through sputtering, and forming a data line electrode through masking operation; forming a second protection layer on the first protection layer and the data line electrode through CVD and forming first, second, and third bridging holes through masking operation; forming a transparent conductive layer on the second protection layer through sputtering and patternizing the transparent conductive layer through masking operation.