Thin-Film Transistor Active-Layer Holes for Stable Wide Channels
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Solution Overview
Problem
Existing thin film transistors face challenges in achieving a wide active layer while controlling conductorization diffusion, which affects mobility and driving stability.
Innovation Solution
Incorporating one or more holes in the active layer of the thin film transistor to control or prevent conductorization diffusion, even when the channel region width is increased.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the width of the active layer is increased, then the current driving ability is improved, but the conductorization diffusion increases causing threshold voltage instability
Solution Approach 1:
The active layer is segmented into multiple regions with different thicknesses - a first active layer region and a second active layer region - to control conductorization diffusion while maintaining current driving ability. The thinner second region prevents excessive dopant penetration while the overall active layer width provides sufficient current capacity.
Solution Approach 2:
Different regions of the active layer are given different local properties through varying thickness. The second active layer region has a smaller thickness than the first region, creating localized quality differences that control where conductorization occurs and prevent threshold voltage instability in critical areas.
2Speed
If the width of the active layer is increased, then the mobility is improved, but the conductorization penetration depth increases reducing effective channel area
Solution Approach 1:
The active layer is divided into regions with different thicknesses to segment the conduction path. This allows the active layer to be wide enough for high mobility while the thinner second region limits conductorization penetration, preserving the effective channel area.
Solution Approach 2:
The thickness parameter of the active layer is changed across different regions. By varying the thickness from the first region to the thinner second region, the patent optimizes both mobility (through sufficient width) and effective channel area (through controlled penetration depth in thinner regions).
Data Source
AI summary
A thin film transistor for a display device can include an active layer disposed on a substrate, a gate electrode overlapping with the active layer, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and at least one hole in the active layer, in which the at least one hole at least partially overlaps with an edge of the gate electrode. Also, the at least one hole in the active layer can control or block diffusion of a dopant within the active layer.