Thin Film Transistor Active Layer Conductivity via Plasma Treatment
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Solution Overview
Problem
The existing manufacturing process for top-gate oxide thin film transistors results in poor film quality and inadequate conductivity due to low temperature deposition of insulator layers, which affects the electrical performance by limiting on-state current and increasing off-state current.
Innovation Solution
A method involving the deposition of an insulator layer at a higher temperature (290° C. or above) to enhance the conductivity of the active layer, which includes plasma treatment to make the active layer conductive and further modify its structure, improving the electrical characteristics of the thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulator layer is deposited at a low temperature, then the manufacturing process is easier and energy consumption is lower, but the film quality is poor and the conductivity of the active layer is insufficient
Solution Approach 1:
The active layer is pre-treated with plasma before insulator deposition to enhance its conductivity. This preliminary action modifies the surface properties of the active layer, creating a more conductive state that persists through subsequent processing steps, thereby resolving the contradiction between low temperature deposition and sufficient conductivity.
Solution Approach 2:
The patent changes the physical and chemical parameters of the active layer through plasma treatment, altering its surface energy, morphology, and electrical properties. This parameter change enables the active layer to achieve adequate conductivity even when the insulator is deposited at relatively low temperatures.
2Reliability
If the insulator layer is deposited at a high temperature, then the conductivity and film quality of the active layer are improved, but the energy consumption increases and the manufacturing complexity increases
Solution Approach 1:
By performing plasma treatment on the active layer before insulator deposition, the patent prepares the substrate in advance to achieve better film quality and conductivity. This preliminary preparation allows the insulator to be deposited at lower temperatures than would otherwise be required, thereby reducing energy consumption while maintaining high film quality.
3Reliability
If the insulator layer is deposited at a high temperature, then the conductivity of the active layer is enhanced, but the manufacturing process complexity increases
Solution Approach 1:
The plasma treatment step is integrated into the manufacturing process flow before insulator deposition. This preliminary action of surface modification enables subsequent low-temperature deposition while achieving high electrical performance, thereby avoiding the need for complex high-temperature processing equipment and procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the on-state current and decreases the off-state current, enhancing the overall electrical performance of the thin film transistor by improving the conductivity and stability of the active layer.
Implementation Method 1
a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film
Implementation Method 2
depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer
Data Source
AI summary
A thin film transistor and a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the thin film transistor includes: providing a substrate; depositing an active layer film, a gate insulator layer film, and a gate metal layer film on the substrate in sequence, patterning the active layer film, the gate insulator layer film, and the gate metal layer film to form an active layer, a gate insulator layer and a gate metal layer respectively, and depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer; a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film.