TFT Array Substrate Align Mark Structure for Thick PIN Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In digital X-ray detector devices, the thick PIN layer can lead to incomplete etching, resulting in PIN remaining films that cover align marks, causing incorrect recognition and reducing process accuracy.
Innovation Solution
A thin film transistor array substrate with a base substrate having a driving area and a non-driving area, where the PIN layer and align mark layers are sequentially stacked, and the align PIN layer is formed using the same patterning process as the PIN layer, minimizing PIN remaining films and incorrect align mark recognition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the PIN layer is formed with thick thickness to ensure proper detection function, then the detection sensitivity is improved, but the etching completeness deteriorates causing PIN remaining films
Solution Approach 1:
The patent applies local quality by forming the align mark structure with specific layer configurations (first align mark layer, align PIN layer, second align mark layer) in the non-driving area to create etching pathways that differ from the main PIN layer areas. This localized structural modification enables complete etching at the align mark position while maintaining the required thick PIN layer thickness for detection sensitivity in the pixel areas.
2Adaptability or versatility
If multiple masks are used to form different layers, then the device functionality is improved, but the process complexity increases
Solution Approach 1:
The patent merges the align mark formation process with the existing multi-mask layer formation process by integrating the align mark layers into the same manufacturing sequence. The first align mark layer is formed with the gate electrode using the same first mask, and subsequent align mark layers are formed in coordination with other device layers, thereby reducing the total number of separate masking steps while maintaining full device functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the formation of PIN remaining films and incorrect align mark recognition, enhancing the accuracy of the digital X-ray detector panel and improving image quality.
Implementation Method 1
the PIN layer is formed using a dry etching gas
Data Source
AI summary
The present disclosure relates to a thin film transistor array substrate for a digital X-ray detector device and the digital X-ray detector device and a manufacturing method thereof. The thin film transistor array substrate comprises: a base substrate comprising a driving area and a non-driving area; at least one PIN diode disposed within the driving area of the base substrate and comprising a lower electrode, a PIN layer, and an upper electrode; and at least one align mark disposed within the non-driving area of the base substrate, wherein the align mark comprises a first align mark layer, an align PIN layer, and a second align mark layer.