Thin Film Transistor Aperture Offset for Ink Overflow Control
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Solution Overview
Problem
Conventional thin film transistor devices face issues with the formation of organic semiconductor layers in areas where their formation is undesirable, leading to poor electrical connections and transistor performance degradation due to ink overflow and blending between adjacent apertures, especially in high-definition liquid crystal and organic EL display panels.
Innovation Solution
A thin film transistor device structure is designed with partition walls having liquid-repellent surfaces, defining specific apertures to prevent semiconductor ink from overflowing and blending, ensuring accurate layer thickness and material composition by offsetting the source and drain electrode portions within the apertures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If organic semiconductor ink is applied to form semiconductor layers in adjacent apertures, then the transistor elements can be formed, but the ink overflows and blends between apertures causing poor electrical connections
Solution Approach 1:
The aperture is divided into multiple regions by forming ridges that partition the aperture into first, second, and third regions. This segmentation prevents semiconductor ink from overflowing between adjacent apertures while still allowing proper formation of transistor elements in each aperture.
Solution Approach 2:
Ridges are formed as intermediary structures between adjacent apertures to act as barriers that prevent ink overflow. These ridges serve as mediating elements that maintain the separation between adjacent transistor elements while allowing the overall device to function.
2Manufacturing precision
If partition walls are formed to prevent ink overflow, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The ridges serve multiple functions: they act as barriers to prevent ink overflow, define region boundaries within apertures, and provide structural support. This multi-functionality reduces the need for additional separate partition wall structures, thereby limiting the increase in device complexity.
3Area of stationary object
If apertures are positioned closer together for high-definition displays, then area is reduced, but ink blending between adjacent apertures increases
Solution Approach 1:
By segmenting each aperture into multiple regions with ridges, the effective barrier-to-area ratio increases. This allows apertures to be positioned closer together while maintaining proper ink separation, enabling high-definition displays with reduced overall area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-quality thin film transistor devices with improved electrical connections and transistor performance by preventing semiconductor layer formation in undesirable areas and controlling layer thickness, enhancing the yield and quality of organic EL display elements.
Implementation Method 1
partition walls having liquid-repellent surfaces, defining a first aperture, a second aperture, and a third aperture
Data Source
AI summary
In a thin film transistor device, partition walls define first, second, and third apertures. In plan view, at a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.