Thin-Film Transistor Array Resistor for Short-Circuit Protection

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Solution Overview

Problem

Thin-film transistor arrays manufactured using printing methods experience lower yield percentages compared to photolithography, leading to potential short-circuiting between gate and capacitor wires, which can cause failure of the gate power supply and driver due to high current flow.

Innovation Solution

Incorporating a resistor between parts of the capacitor wires to limit current flow in case of short-circuiting, ensuring the gate driver and power supply do not fail, while maintaining low-temperature processing and cost-effectiveness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If printing method is used to manufacture thin-film transistor arrays, then manufacturing cost is reduced and low-temperature processing is enabled, but yield percentage decreases and short-circuiting between gate wire and capacitor wire occurs

Engineering Contradiction:
Improvemanufacturing costVSAvoidyield percentage
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A resistor is inserted in series with the capacitor wire before the capacitor electrode to preemptively prevent the harmful effects of short-circuiting. This resistor limits current flow in advance, preventing gate driver failure even if short-circuiting occurs due to printing method limitations.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The resistor acts as an intermediary element between the capacitor wire and the capacitor electrode. It mediates the current flow, allowing the printing method to be used while protecting the gate driver from the harmful effects of potential short-circuits.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If printing method is used to manufacture thin-film transistor arrays, then manufacturing cost is reduced and low-temperature processing is enabled, but short-circuiting between gate wire and capacitor wire occurs causing gate driver failure

Engineering Contradiction:
Improvemanufacturing costVSAvoidshort-circuiting damage
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The resistor is pre-installed in the capacitor wire to counteract the potential harmful effects of short-circuiting before they can damage the gate driver. This preliminary protective measure enables the use of cost-effective printing methods without risking expensive driver failure.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The resistor converts the potentially harmful unlimited current flow during short-circuiting into a controlled, limited current flow. What would normally be a destructive event becomes a manageable condition that protects the gate driver while allowing the printing manufacturing method to proceed.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resistor effectively prevents failure of the gate power supply and driver during short-circuiting events, allowing for the reuse of these components and maintaining the advantages of low-temperature, low-cost printing methods.

Implementation Method 1

a resistor inserted between parts of the capacitor wire

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS11264406B2Thin-film transistor array, image display device, and method for manufacturing thin-film transistor array
Publication Date: 2022.03.01 TOPPAN HOLDINGS INC
  • US11264406B2 patent drawing
  • US11264406B2 patent drawing
  • US11264406B2 patent drawing

AI summary

A thin-film transistor array including an insulating substrate, a gate insulating film sandwiched between a first structure and a second structure, the first structure including a gate electrode, a gate wire connected to the gate electrode, a capacitor electrode, and a capacitor wire connected to the capacitor electrode, and the second structure including a source electrode, a source wire connected to the source electrode, a drain electrode, and a pixel electrode connected to the drain electrode, a resistor inserted between parts of the capacitor wire, and a semiconductor layer formed between the source electrode and the drain electrode. The pixel electrode is positioned over the capacitor electrode with the gate insulating film positioned therebetween and has a storage capacitance, and the source electrode and the drain electrode are positioned over the gate electrode with the gate insulating film positioned therebetween.