TFT Array Substrate Leakage Current Reduction via Patterned Protective Layer
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Solution Overview
Problem
Conventional thin film transistor array substrates experience leakage current issues due to the use of silicon oxide protective layers, limiting their application in display technologies like LCDs.
Innovation Solution
A thin film transistor array substrate design featuring a patterned protective layer over the source/drain layer and an oxide semiconductor layer, with a resin layer covering the oxide semiconductor layer, which reduces or eliminates leakage current and improves performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide protective layer is directly formed on the a-IGZO layer, then the protective layer provides protection, but leakage current occurs
Solution Approach 1:
An intermediate patterned protective layer is introduced between the a-IGZO layer and the pixel electrode. This patterned protective layer serves as a mediator that prevents direct contact between the silicon oxide layer and the a-IGZO layer, thereby eliminating the leakage current path while still providing necessary protection. The patterned structure allows selective coverage that maintains electrical isolation where needed.
Solution Approach 2:
The protective layer is segmented into a patterned structure rather than being a continuous layer. This segmentation creates isolated regions of protection that avoid forming continuous leakage paths through the a-IGZO layer, while still providing protective coverage in critical areas. The patterned design breaks up the potential leakage current pathways.
2Reliability
If a patterned protective layer and oxide semiconductor layer are added, then leakage current is reduced, but device complexity increases
Solution Approach 1:
The patterned protective layer serves multiple functions simultaneously: it provides electrical isolation to prevent leakage current, offers physical protection to underlying layers, and defines active regions through its patterned structure. This multi-functionality reduces the need for separate dedicated layers for each function, thereby limiting the increase in overall device complexity despite adding structural elements.
Solution Approach 2:
The protective layer and the semiconductor layer are merged into an integrated structure where the patterned protective layer and oxide semiconductor layer work together as a unified system. This merging allows the structure to achieve leakage prevention while maintaining a compact design that doesn't excessively increase complexity, as the layers are formed in sequence and integrated into the existing TFT architecture.
Data Source
AI summary
A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current.