TFT Array Substrate Three-Patterning Yield Improvement

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The three-patterning process for manufacturing TFT array substrates has a relatively low yield due to the photoresist stripping-off technology used in the prior art, limiting its application in production.

Innovation Solution

A method involving a first patterning process to form an active layer with separated source and drain electrodes, a second patterning process to create a contact via hole in an insulating layer exposing the source electrode, and a third patterning process to form a pixel electrode connected to the source electrode through the via hole, reducing the number of patterning processes and increasing yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the three-patterning process is used to manufacture TFT array substrates, then the manufacturing time and cost are reduced, but the yield is relatively low due to photoresist stripping-off technology

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidyield
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent extracts and removes the photoresist stripping-off process from the manufacturing flow by using a novel patterning approach where photoresist is not stripped off, thereby eliminating the source of low yield while maintaining the benefits of reduced patterning steps

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of following the conventional approach of forming patterns and then stripping photoresist, the patent inverts the sequence by maintaining photoresist patterns through additional patterning steps, allowing the photoresist to serve as a permanent mask rather than a temporary one

Inventive Principle:
Principle #13The other way round (Inversion)

2Reliability

If the four-patterning process is used, then the yield is improved, but the manufacturing time and cost increase

Engineering Contradiction:
ImproveyieldVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent merges multiple patterning operations into a unified three-step process where the photoresist patterns are reused across different metal layer formations, eliminating redundant steps while maintaining high yield through careful process integration

Inventive Principle:
Principle #5Merging (Combining)

3Productivity

If the number of patterning processes is reduced, then the production efficiency is improved, but the manufacturing precision may deteriorate

Engineering Contradiction:
Improveproduction efficiencyVSAvoidpattern accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent performs preliminary patterning of the photoresist layer with precise geometric definitions before subsequent metal depositions, ensuring that all critical dimensions are established in advance when the photoresist mask is most stable and accurate

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS8895334B2Thin film transistor array substrate and method for manufacturing the same and electronic device
Publication Date: 2014.11.25 BOE TECHNOLOGY GROUP CO LTD
  • US8895334B2 patent drawing
  • US8895334B2 patent drawing
  • US8895334B2 patent drawing

AI summary

Embodiments of the present invention disclose a thin film transistor array substrate and a method for manufacturing the same and an electronic device. The method for manufacturing the thin film transistor array substrate comprises: a first patterning process, in which a pattern of an active layer which is formed by a semiconductor layer and patterns of a source electrode and a drain electrode, which are separated from each other and are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of an insulating layer is formed on the transparent substrate subjected to the first patterning process, the pattern of the insulating layer comprising a contact via hole exposing the source electrode; and a third patterning process, in which a pattern of a pixel electrode, which is formed by a transparent conductive layer, and a pattern of a gate electrode, which is formed by a second metal layer, are formed on the transparent substrate subjected to the second patterning process, the pixel electrode being connected to the source electrode through the contact via hole.