TFT Backplate Gate Insulating Layer Light Shielding
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Solution Overview
Problem
Metal oxide TFTs face challenges such as complex fabrication processes, high parasitic capacitance, and low product yield due to the complexity of channel layer semiconductor selection and process requirements.
Innovation Solution
A method for fabricating a TFT-containing backplate using a top-gate TFT with a gate insulating layer made from a negative silicone light shielding material, which simplifies the process by omitting SiOx film deposition and dry etching, and includes the use of photo-curable silicone materials with light shielding dyes like black fluran or crystal violet nitriles to form an inverted trapezoid cross-sectional shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional SiOx film deposition and dry etching processes are used to form the gate insulating layer, then the fabrication process follows standard procedures, but the process complexity increases and productivity decreases
Solution Approach 1:
The patent changes the material parameter of the gate insulating layer from conventional SiOx to negative silicone light shielding material. This material parameter change enables the layer to serve multiple functions simultaneously: providing gate insulation, blocking light during exposure, and forming the desired pattern through photochemical reactions. This eliminates the need for separate SiOx deposition and dry etching processes, thereby simplifying the fabrication process and improving productivity.
Solution Approach 2:
The negative silicone light shielding material performs multiple functions within a single layer: it provides the gate insulating function, acts as a light-blocking layer during photolithography exposure, and serves as the pattern-forming resist. This multi-functionality consolidates what would traditionally require multiple separate layers and processing steps, directly addressing the contradiction between process simplicity and productivity.
2Device complexity
If conventional multi-step processes are used for gate insulating layer formation, then process completeness is ensured, but device complexity increases
Solution Approach 1:
The patent merges the gate insulating layer formation with the photolithography process by using negative silicone light shielding material that serves as both the insulating layer and the photoresist. This consolidation reduces the number of fabrication steps while maintaining process completeness, as the material undergoes photochemical crosslinking during exposure to form the final patterned structure in situ.
Solution Approach 2:
The negative silicone light shielding material is a composite material combining silicone base polymers with light-absorbing dyes or pigments. This composite structure provides both the electrical insulation properties needed for the gate and the optical absorption properties needed for photolithography patterning, enabling a single-material solution that replaces multiple conventional layers.
3Manufacturing precision
If standard photolithography without light shielding is used, then the process is simpler, but light shielding effect is insufficient leading to poor patterning precision
Solution Approach 1:
The patent modifies the optical parameters of the photoresist material by incorporating light shielding dyes or pigments into the silicone base. This parameter change increases the optical absorption coefficient of the material, enabling effective light blocking during exposure and thereby improving patterning precision without adding structural complexity.
Solution Approach 2:
The light shielding dyes or pigments act as intermediary substances within the photoresist matrix. These intermediaries absorb incident light and prevent it from reaching underlying layers that should remain unpatterned, thereby enhancing the contrast and precision of the developed pattern without complicating the overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces parasitic capacitance, improves device performance, and increases product yield by simplifying the fabrication process and enhancing light shielding effects.
Implementation Method 1
the negative silicone light shielding material is a photo-curable silicone material which comprises a light shielding material
Implementation Method 2
performing exposure on the negative silicone light shielding material from a side facing the substrate, and performing development to form the gate insulating layer
Data Source
AI summary
A method for fabricating a TFT-containing backplate is disclosed. The method includes forming a top-gate TFT on a substrate. The top-gate TFT includes a gate insulating layer which includes a negative silicone light shielding material. A TFT-containing backplate is also disclosed.