Thin Film Transistor Center Sub-Transistor Heat Management
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Solution Overview
Problem
In display panels employing Gate Driver-On-Array (GOA) technology, thin film transistors with high channel width-to-length ratios generate excessive heat, leading to overheating and potential burnout of the center sub-thin film transistor due to increased heat radiation from surrounding transistors.
Innovation Solution
Designing a thin film transistor structure where the center sub-thin film transistor has the smallest width-to-length ratio, with channel regions of surrounding transistors decreasing in length and increasing in width as distance from the center increases, or dividing the active layer into segments to minimize heat generation, thereby reducing resistance and heat output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If thin film transistors with high channel width-to-length ratio are employed to achieve large current, then the display effect is ensured, but excessive heat is generated leading to overheating and potential burnout of the center sub-thin film transistor
Solution Approach 1:
The patent applies local quality by making each sub-thin film transistor have different channel width-to-length ratios according to its position. The center sub-transistor has a smaller ratio (lower current, less heat), while surrounding transistors have progressively larger ratios (higher current, more heat). This spatial variation in electrical characteristics optimizes heat distribution across the array, preventing center overheating while maintaining overall high current capability for display performance.
2Power
If multiple comb-shaped thin film transistors are connected in parallel to achieve high current, then the display effect is ensured, but the center sub-thin film transistor overheats due to heat radiation from surrounding transistors
Solution Approach 1:
The patent implements local quality by assigning different channel width-to-length ratios to sub-transistors based on their positions. The center sub-transistor has a smaller ratio resulting in lower current and reduced heat generation, while surrounding transistors have larger ratios. This creates a heat distribution pattern that prevents thermal accumulation at the center, improving reliability without sacrificing overall current capability.
Solution Approach 2:
The patent converts the harmful heat radiation from surrounding transistors into a beneficial design feature. By intentionally designing surrounding transistors with larger channel width-to-length ratios, they generate more heat but are positioned away from the sensitive center region. The center transistor's smaller ratio compensates for incoming heat radiation, transforming the potential harmful thermal interaction into a balanced thermal profile across the array.
Data Source
AI summary
The present disclosure relates to a thin film transistor. The thin film transistor may include a substrate, a source electrode on the substrate, a drain electrode on the substrate, a gate on the substrate, and an active layer on the substrate. The source electrode may include a first teeth portion. The drain electrode may include a second teeth portion. The gate may include a third teeth portion. The active layer may include a plurality of channel regions. The first teeth portion, the second teeth portion, the third teeth portion, and the active layer form a plurality of sub-thin film transistors connected in parallel. The center sub-thin film transistor has a channel region having a smallest width-to-length ratio among the plurality of sub-thin film transistors.