Thin Film Transistor Channel Layer Oxygen Ion Implantation
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Solution Overview
Problem
The density of oxygen ions in the channel layer of thin film transistors is easily decreased during the etching process of the source or drain electrode, adversely affecting electron mobility.
Innovation Solution
Implanting oxygen ions into specific regions of the channel layer to maintain or increase oxygen ion concentration within the range of 1×10^18 to 1×10^21 per cubic centimeter, forming high oxygen ion concentration regions adjacent to or away from the gate insulating layer, thereby enhancing electron mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If etching process of source electrode or drain electrode is performed, then source electrode and drain electrode are formed, but oxygen ion density in channel layer decreases
Solution Approach 1:
The patent applies preliminary anti-action by performing oxygen ion implantation into the channel layer before the etching process of source and drain electrodes. This pre-treatment creates a buffer of oxygen ions that compensates for the oxygen loss during subsequent etching, preventing the decrease in oxygen ion density and maintaining electron mobility in the channel layer.
Solution Approach 2:
The patent applies preliminary action by implanting oxygen ions into the channel layer in advance before the etching process. This preliminary oxygen ion implantation ensures that sufficient oxygen ions are present in the channel layer to maintain proper electrical characteristics during and after the etching of source and drain electrodes.
2Productivity
If oxygen ion density in channel layer decreases, then etching process can be completed, but electron mobility in channel layer is adversely affected
Solution Approach 1:
The patent applies preliminary anti-action by implanting oxygen ions into the channel layer before etching to counteract the harmful effect of oxygen loss. This pre-treatment creates a protective oxygen ion reservoir that maintains electron mobility during the etching process, preventing adverse effects on transistor performance.
Solution Approach 2:
The patent applies parameter changes by controlling the oxygen ion density in the channel layer through implantation. By adjusting the oxygen ion concentration to specific ranges (1×10^18 to 1×10^21 ions/cm³), the patent optimizes electron mobility while ensuring proper etching process completion.
3Quantity of substance
If oxygen ions are implanted into channel layer, then oxygen ion concentration is maintained or increased, but additional manufacturing step is required
Solution Approach 1:
The patent merges the oxygen ion implantation step with the existing manufacturing process flow by integrating it before the etching process. This combination allows the oxygen ion implantation to be performed as a preparatory step that complements the subsequent etching, rather than as a separate standalone process, thereby minimizing additional complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Stabilizes the cutoff current and threshold voltage of the thin film transistor substrate by maintaining optimal oxygen ion density, improving electron mobility and overall transistor performance.
Implementation Method 1
Implanting oxygen ions into specific regions of the channel layer to maintain or increase oxygen ion concentration
Data Source
AI summary
A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×1018 to about 1×1021 per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.