Thin Film Transistor Channel Width Edge Profile Curvature
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Solution Overview
Problem
Existing thin film transistors in LCDs face challenges in achieving a large width to length ratio, which affects their performance and aperture ratio, making it difficult to improve resolution while maintaining display quality.
Innovation Solution
A thin film transistor design with a channel width edge profile featuring an up-and-down curved section perpendicular to the base substrate, along with protrusion or groove structures, to increase the channel width while maintaining a constant projection area, thereby enhancing the width to length ratio and turn-on current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the thin film transistor size is reduced to improve resolution, then the resolution ratio is improved, but the width to length ratio of the channel decreases and performance deteriorates
Solution Approach 1:
The patent introduces a curved section in the channel width edge profile perpendicular to the base substrate surface, transitioning from a planar 2D channel structure to a 3D curved structure. This dimensional change allows the channel to achieve a larger effective width-to-length ratio within a reduced footprint, enabling both high resolution and maintained transistor performance in small-sized transistors
Solution Approach 2:
The patent applies curvature to the channel width edge profile by introducing an up-and-down curved section. This curvature increases the effective channel width without proportionally increasing the projection area, thereby improving the width-to-length ratio and transistor performance while maintaining the reduced size needed for high resolution displays
2Reliability
If the channel width is increased to improve transistor performance, then the turn-on current increases, but the projection area increases and aperture ratio decreases
Solution Approach 1:
By curving the channel width edge profile in the perpendicular direction, the patent effectively increases the channel width in 3D space while keeping the 2D projection area constant. This allows the transistor to achieve higher turn-on current and performance without increasing the footprint area, thus maintaining the aperture ratio
Solution Approach 2:
The curved section in the channel width edge profile utilizes spatial curvature to pack more channel width into the same projection area. This curvature strategy enables the channel to achieve a larger effective width for improved performance while occupying the same planar space, preventing aperture ratio degradation
Data Source
AI summary
A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.