Parallel TFT Channel Width Variation for LCD Heat Distribution

The patent applies local quality by making the channel widths of thin film transistors non-uniform across the device. Specifically, the central part of the driving device has narrower channel widths compared to the peripheral parts. This local variation in channel width distributes heat generation more evenly across the device, preventing excessive heat accumulation in the central region while maintaining overall high response speed performance.

The patent implements local quality by varying the channel widths of individual thin film transistors in the parallel connection based on their position. Transistors in the central region have narrower channels that generate less heat, while peripheral transistors have wider channels. This spatially differentiated design allows the parallel-connected transistors to collectively handle high current while distributing heat generation uniformly across the device structure.

The patent resolves the contradiction between manufacturing simplicity and device reliability by implementing a systematic local quality approach. Rather than completely uniform channels, the design specifies that central channels should be narrower than peripheral channels. This can be achieved through controlled photolithography processes with position-dependent exposure or etching parameters, maintaining reasonable manufacturing simplicity while effectively preventing heat accumulation and device defects.