Thin-Film Transistor Composite Electrode for Low Reflection and Adhesion
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Solution Overview
Problem
The poor adhesion between molybdenum oxide film and dielectric layers such as silicon oxide, silicon nitride, and silicon oxynitride in thin film transistors leads to film delamination and yield issues during high-temperature processing.
Innovation Solution
A thin film transistor design featuring a composite film layer for at least one of the gate, source, or drain electrodes, comprising a first metal layer, a low reflection functional metal oxide layer, and an alloy layer formed by implanting metal ions into the metal oxide layer, which enhances adhesion and stability by increasing the density and hardness of the alloy layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a low reflection molybdenum oxide film is arranged above a metal wire to reduce reflectivity, then the reflectivity of the product is reduced, but the dielectric layers above the molybdenum oxide film are prone to bulge and fall off due to poor adhesion
Solution Approach 1:
The patent uses a composite film structure consisting of a molybdenum oxide layer combined with a silicon nitride layer. The molybdenum oxide layer provides low reflectivity (5% reflectance), while the silicon nitride layer provides strong adhesion to dielectric layers. This composite structure resolves the contradiction by combining materials with complementary properties - one for optical performance and one for mechanical adhesion.
Solution Approach 2:
The silicon nitride layer acts as an intermediary between the molybdenum oxide film and the dielectric layers. It provides a bonding interface that ensures strong adhesion while allowing the molybdenum oxide layer to maintain its low reflectivity function. The intermediary layer prevents direct contact between incompatible materials, avoiding adhesion failures.
2Object-affected harmful factors
If molybdenum oxide film is used to reduce reflectivity, then the visual effect is improved, but the film and dielectric layers are prone to bulge after high temperature processing
Solution Approach 1:
The composite film of molybdenum oxide and silicon nitride provides both optical performance and thermal stability. The silicon nitride component has high thermal stability and maintains structural integrity after high temperature processing, preventing the bulging issue that occurs with pure molybdenum oxide films.
Solution Approach 2:
The patent changes the material composition parameters by introducing silicon nitride into the film structure. This compositional change alters the thermal and mechanical properties of the film, making it resistant to bulging under high temperature conditions while preserving the low reflectivity characteristic of molybdenum oxide.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite film layer improves adhesion between the metal oxide layer and dielectric layers, preventing delamination and increasing product yield by reducing reflectivity and enhancing stability under high temperature conditions.
Implementation Method 1
the alloy layer is formed by implanting metal ions into the low reflection functional layer
Data Source
AI summary
The present application discloses a thin film transistor and an array substrate. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer. The composite film layer includes a metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers. The alloy layer covering a surface of the low reflection functional layer can enhance stability of the low reflection functional layer. Because adhesion between the alloy layer and dielectric layers such as silicon oxide, silicon nitride, and silicon oxynitride is stronger than that of the low reflection functional layer, the bulge phenomenon is not easy to occur under a high temperature environment.