Thin Film Transistor Conductive Layer for Drive Capability
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Solution Overview
Problem
The active layer of existing thin film transistors has poor conductivity, which limits their drive capability in display technologies such as liquid crystal and OLED panels.
Innovation Solution
A thin film transistor design that includes a conductive layer on the semiconductor channel region, enhancing the electric field and conductivity by inducing charges with a polarity opposite to the gate voltage, with the conductive layer being spaced apart from the source and drain electrodes, and using materials like amorphous silicon, polycrystalline silicon, or oxide semiconductors for the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional active layer made of semiconductor material is used, then the thin film transistor structure is simple, but the conductivity is poor
Solution Approach 1:
The active layer is segmented into three functional regions: source electrode contact region, semiconductor channel region, and drain electrode contact region. This segmentation allows each region to be optimized independently, with the channel region having enhanced conductivity through the conductive layer while contact regions maintain good ohmic contact properties.
Solution Approach 2:
A conductive layer is introduced as an intermediary element between the gate electrode and the semiconductor channel region. This conductive layer serves as a mediator to enhance the electric field in the channel region, thereby improving conductivity without requiring changes to the fundamental transistor structure or contact regions.
2Productivity
If the conductivity of the active layer is enhanced, then the drive capability improves, but the manufacturing process becomes more complex
Solution Approach 1:
The conductive layer is merged with the gate electrode structure, forming an integrated gate assembly. The conductive layer extends from beneath the gate electrode and connects to the source and drain electrodes, combining multiple functions (gate control and conductivity enhancement) into a single structural element that can be manufactured in one process sequence.
Solution Approach 2:
The conductivity of the active layer is enhanced by changing the electrical parameters through the introduction of the conductive layer, which modifies the electric field distribution in the channel region. This approach improves drive capability through parameter modification rather than through complex material substitutions or multi-step manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced electric field in the semiconductor channel region improves the conductivity of the thin film transistor, addressing the limitations of existing transistors and enabling better performance in display devices.
Implementation Method 1
when a voltage is applied to the gate, charges with a polarity opposite to charges of the gate will be induced at a side of the conductive layer close to the gate, and therefore an electric field may be formed between the gate and the conductive layer
Data Source
AI summary
The present invention provides a thin film transistor, an array substrate and a display device. The thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a source electrode contact region, a drain electrode contact region, and a semiconductor channel region arranged therebetween. A conductive layer is provided on the semiconductor channel region and is spaced apart from the source electrode and the drain electrode. The semiconductor channel region is U-shaped when viewed in a plane view of the pixel thin film transistor, and the source electrode includes a U-shaped part corresponding to the U-shaped semiconductor channel region. The conductive layer includes at least one conductive part, and the at least one conductive part is arranged between one end of the drain electrode and the U-shaped part of the source electrode.