TFT Contact Resistance Reduction via Dual Metal Layer Interconnect

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Solution Overview

Problem

The high resistance and impedance of ITO layers in traditional TFT liquid crystal displays lead to increased contact impedance between metal layers, resulting in poor display effects and reduced product yield rates.

Innovation Solution

A manufacturing method that involves depositing a conductive film through a contact hole etched in both silicon nitride protective films to connect metal layers, reducing the connecting distance and impedance between them, using ITO, AZO, or IZO as conductive materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Weight of moving object

If a conventional glass substrate is used, then the substrate has high strength and good flatness, but the substrate is heavy and expensive

Engineering Contradiction:
Improvesubstrate weightVSAvoidsubstrate strength
Core Design Contradiction:
Weight of moving objectVSStrength

Solution Approach 1:

The patent changes the material parameter from conventional glass to flexible polymer materials (such as polyethylene terephthalate or polypropylene), fundamentally altering the substrate's physical properties to achieve both lightweight and flexible characteristics while maintaining sufficient mechanical strength through material selection and structural design

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite structures by combining flexible polymer substrates with various functional layers (such as buffer layers, emission layers, and protective coatings) to create a composite material system that achieves the desired balance between flexibility, strength, and lightweight properties

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If a flexible polymer substrate is used, then the substrate is lightweight and flexible, but the substrate has poor flatness and is difficult to control

Engineering Contradiction:
Improvesubstrate flexibilityVSAvoidsubstrate flatness control
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary flattening treatments to the flexible substrate before the main manufacturing process, including pre-stretching, pre-flattening, and pre-alignment operations, to establish a stable baseline flatness that facilitates subsequent precise manufacturing operations

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent controls the physical parameters of the flexible substrate during manufacturing, including temperature, humidity, and tension, to dynamically adjust and maintain optimal flatness conditions throughout the manufacturing process, transforming the substrate's physical state to achieve desired flatness

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If the substrate is made flexible, then the display device can be bent, but the alignment of liquid crystal molecules becomes difficult to control

Engineering Contradiction:
Improvedisplay flexibilityVSAvoidliquid crystal alignment precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent applies different surface treatments to different regions of the flexible substrate, with specific alignment layers and surface modifications applied only in the liquid crystal deposition areas, allowing the flexible substrate to maintain its overall flexibility while providing localized high-precision alignment control where needed

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent pre-treats the flexible substrate surface with alignment layers and surface modifications before liquid crystal deposition, establishing predetermined alignment patterns and forces that guide liquid crystal molecule orientation even on flexible, bent substrates

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively lowers contact impedance, enhances display quality, and increases product yield and competitive capability by minimizing the resistance and impedance between metal layers.

Implementation Method 1

depositing a conductive film on the second metal layer where the second silicon nitride protective film is etched, and on a contact hole which passes through the second silicon nitride protective film and the first silicon nitride protective film, so as to connect and conduct with the first metal layer and the second metal layer

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

depositing a first silicon nitride protective film on a first metal layer formed on a substrate; depositing a second metal layer and a second silicon nitride protective film on the first silicon nitride protective film in order

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentEP3483649B1Manufacturing method for TFT device of liquid crystal display
Publication Date: 2022.10.05 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • EP3483649B1 patent drawingFigure 1~2
  • EP3483649B1 patent drawingFigure 3

AI summary

Provided are a TFT liquid crystal display device and a method for manufacturing the same. The TFT liquid crystal display device comprises: a substrate (21); a first metal layer (22) provided on the substrate (21), a first silicon nitride protective film (23) being deposited on the first metal layer (22); a second metal layer (24) deposited on the first silicon nitride protective film (23), a second silicon nitride protective film (25) being deposited on the second metal layer (24); and a conductive film (28) deposited on the second metal layer (24) where the second silicon nitride protective film (25) is etched away, and connected to the first metal layer (22) through a contact hole (26) which passes through the second silicon nitride protective film (25) and the first silicon nitride protective film (23), so that the first metal layer (22) is connected to the second metal layer (24). Since a connection distance of the conductive thin film (28) between different metal layers is reduced, a contact resistance between the metals is reduced, thereby effectively reducing the contact resistance and improving the product yield.