Thin Film Transistor Doped Layer Gradient for Vehicle Displays
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Solution Overview
Problem
Thin film transistors in display substrates for vehicle-mounted devices experience reduced on-state current due to small size and complex environments, leading to insufficient input and output signals, especially at low temperatures.
Innovation Solution
A thin film transistor design with doped layers having progressively increasing resistance and dopant content from the source and drain towards the active layer, combined with comb-shaped electrodes, to reduce impedance and contact resistance, enhancing the on-state current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the display substrate is miniaturized for vehicle-mounted devices, then the device size is reduced, but the on-state current of the thin film transistor is reduced
Solution Approach 1:
The patent applies local quality by creating non-uniform doping concentrations within the source and drain regions. Specifically, the doping concentration varies across different areas of the source and drain electrodes, with higher doping near the active layer interface and lower doping towards the comb-tooth portions. This localized variation optimizes contact resistance at critical interfaces while maintaining overall device miniaturization.
Solution Approach 2:
The patent introduces a vertical dimension to the doping profile by creating multiple doped layers at different depths and positions. The source and drain structures include doped regions at various vertical levels (e.g., first doped region, second doped region, third doped region), transforming a two-dimensional doping approach into a three-dimensional gradient structure that enhances current flow in miniaturized devices.
2Adaptability or versatility
If the operating environment temperature is reduced, then the vehicle-mounted display can operate in cold conditions, but the on-state current of the thin film transistor is further reduced
Solution Approach 1:
The patent employs parameter changes by systematically varying doping concentrations across multiple regions and layers of the source and drain structures. The doping concentration parameters are optimized to compensate for temperature effects, with specific gradient profiles designed to maintain adequate carrier density and mobility even at low operating temperatures, thereby preserving on-state current in cold environments.
3Volume of moving object
If the thin film transistor size is reduced, then the display substrate can be miniaturized, but the input and output signals become insufficient
Solution Approach 1:
The patent utilizes composite material structures by combining multiple doped semiconductor layers with different doping concentrations and characteristics. The source and drain regions comprise a composite of differently doped layers (e.g., heavily doped region near active layer, moderately doped region, lightly doped region), creating a multi-layer composite structure that enhances electrical performance in miniaturized transistors by optimizing both contact resistance and current carrying capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the on-state current of the thin film transistor, ensuring sufficient signal output and normal display functionality even in challenging environments, particularly at low temperatures.
Implementation Method 1
a plurality of doped layers respectively located between the source and the active layer and between the drain and the active layer, and a resistance of one of the doped layers farthest away from the active layer is smaller than that of any other doped layer
Implementation Method 2
contents of dopants in the plurality of doped layers are decreased gradually in a direction from the source and the drain towards the active layer
Data Source
AI summary
The present disclosure provides a thin film transistor, including: an active layer, a source and a drain electrically coupled with the active layer, and a plurality of doped layers located between the source and the active layer and between the drain and the active layer, a resistance of one of the plurality of doped layers farthest away from the active layer is smaller than that of any other doped layer. The disclosure further provides a gate driving circuit, a display substrate and a display device. With the present disclosure, current loss of a current passing through the doped layers of the thin film transistor is reduced, on-state current of the thin film transistor is improved and a situation that output signals of the thin film transistor are insufficient is avoided.