Thin Film Transistor Dual Current Paths for OLED Compensation

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Solution Overview

Problem

Conventional thin film transistors provide a single current path, making it complex and component-heavy to implement circuits requiring different currents, and they struggle to rapidly compensate for threshold voltage changes in light-emitting devices.

Innovation Solution

A thin film transistor design featuring two current paths of different lengths, allowing for simultaneous provision of currents with varying magnitudes, and a pixel circuit configuration that includes multiple transistors for efficient threshold voltage compensation and organic light-emitting diode drive.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single current path is used in conventional thin film transistors, then the transistor structure is simple, but it becomes complex and requires more components to implement circuits needing different currents

Engineering Contradiction:
Improvetransistor structureVSAvoidcurrent provision capability
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The semiconductor layer is divided into multiple channel regions with different channel lengths, creating multiple current paths (first current path and second current path) within a single transistor. This segmentation allows the transistor to provide different currents through different paths without requiring multiple separate transistors, thus reducing overall circuit complexity while maintaining versatility.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The thin film transistor is designed to perform multiple functions simultaneously: it can provide a first current through the first current path and a second current through the second current path. This multi-functionality allows a single transistor to replace what would traditionally require multiple transistors, reducing component count and simplifying circuit design while maintaining adaptability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Device complexity

If a fixed channel length is used in thin film transistors, then the transistor design is simple, but it cannot rapidly compensate for threshold voltage changes

Engineering Contradiction:
Improvetransistor designVSAvoidthreshold voltage compensation
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The transistor design incorporates dynamic adaptability by providing multiple current paths with different channel lengths. This allows the transistor to dynamically adjust its current characteristics to compensate for threshold voltage changes. The first current path with one channel length can provide higher current for rapid compensation, while the second current path with a different channel length provides stable operation, enabling the system to respond dynamically to threshold voltage variations.

Inventive Principle:
Principle #15Dynamics

3Adaptability or versatility

If multiple transistors are used to provide different currents, then various current requirements can be met, but the number of components increases

Engineering Contradiction:
Improvecurrent varietyVSAvoidcircuit components
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Multiple current paths that would traditionally require separate transistors are merged into a single thin film transistor structure. The semiconductor layer contains multiple channel regions that form different current paths, allowing the transistor to provide various currents (first current and second current) while reducing the overall component count. This merging maintains current variety while simplifying the circuit.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS8633523B2Thin film transistor and pixel circuit having the same
Publication Date: 2014.01.21 SAMSUNG DISPLAY CO LTD
  • US8633523B2 patent drawing
  • US8633523B2 patent drawing
  • US8633523B2 patent drawing

AI summary

A thin film transistor which may be included in a pixel circuit includes: a substrate; a semiconductor layer formed on the substrate and including a source region, a first drain region spaced apart from the source region by a first current path, and a second drain region spaced apart from the source region by a second current path having a length different from that of the first current path; a gate electrode insulated from the semiconductor layer by a gate insulating layer; a source electrode connected to the source region of the semiconductor layer; a first drain electrode connected to the first drain region of the semiconductor layer; and a second drain electrode connected to the second drain region of the semiconductor layer. Currents having different magnitudes may be simultaneously provided through the first current path and the second current path.