TFT Electrode Bending for Channel Width Expansion

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Solution Overview

Problem

In TFT-LCD technology, it is challenging to reduce the channel length of thin film transistors (TFTs) without increasing their size, which affects the pixel aperture ratio and display performance.

Innovation Solution

The TFT design includes a first and second electrode pattern with a bending portion and a second strip-like portion, allowing for an increased channel width without expanding the TFT size, achieved by modifying the patterning process to form the electrodes at the same layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the channel width is increased to improve TFT performance, then the width-to-length ratio is improved, but the TFT size increases and the pixel aperture ratio is reduced

Engineering Contradiction:
Improvewidth-to-length ratioVSAvoidpixel aperture ratio
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent applies dimensionality change by introducing a bending portion in the electrode pattern that extends in the second direction (perpendicular to the first direction). This allows the channel to utilize both the first direction (length) and second direction (width), effectively increasing the channel area and width-to-length ratio without proportionally increasing the overall TFT footprint in the plane, thereby maintaining pixel aperture ratio while improving TFT performance

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the channel length is reduced to improve TFT performance, then the width-to-length ratio is improved, but the process limits make it very difficult to reduce the channel length

Engineering Contradiction:
Improvewidth-to-length ratioVSAvoidchannel length reduction
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

Instead of reducing channel length in the first direction (which is constrained by process limits), the patent extends the channel into the second direction through the bending portion. This approach achieves channel length reduction effect (by maintaining shorter linear dimensions) while improving the width-to-length ratio through the multi-directional channel path, without violating process manufacturing constraints

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If the channel is extended in any direction to improve TFT performance, then the width-to-length ratio is improved, but the TFT size increases

Engineering Contradiction:
Improvewidth-to-length ratioVSAvoidTFT size
Core Design Contradiction:
Manufacturing precisionVSLength of stationary object

Solution Approach 1:

The patent extends the channel into the second direction (width dimension) through the bending portion rather than only extending in the first direction (length dimension). This multi-directional extension increases the channel area and width-to-length ratio more efficiently, achieving better TFT performance with a smaller overall TFT size compared to unidirectional extension approaches

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS10361317B2Thin film transistor and method for manufacturing the same, array substrate and display device
Publication Date: 2019.07.23 BOE TECHNOLOGY GROUP CO LTD
  • US10361317B2 patent drawing
  • US10361317B2 patent drawing

AI summary

A TFT and a method for manufacturing the same, an array substrate and a display device are provided. The TFT includes a first electrode pattern and a second electrode pattern arranged at an identical layer. The first electrode pattern includes a first strip-like portion extending in a first direction, and the second electrode pattern includes a bending portion surrounding a first end of the first strip-like portion. The second electrode pattern further includes a second strip-like portion extending from a first end of the bending portion in the first direction. A channel formation region of the TFT includes a region between the bending portion and the first strip-like portion, and a region between the second strip-like portion and the first strip-like portion.