Thin-Film Transistor Electrode Stack for Corrosion Resistance
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Solution Overview
Problem
Conductive materials like aluminum and copper used in thin film transistors for display substrates are prone to corrosion and oxidation, which affects the reliability and longevity of the devices.
Innovation Solution
The use of a molybdenum-nickel alloy as a second conductive layer, combined with a molybdenum-nickel-titanium alloy in the source and drain electrodes, prevents corrosion and oxidation by forming a protective barrier over the first conductive layer made of copper, copper alloy, aluminum, or aluminum alloy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If aluminum or copper is used as conductive material in thin film transistors, then electrical conductivity is improved, but corrosion and oxidation resistance deteriorates
Solution Approach 1:
The patent employs a composite conductive layer structure consisting of a first conductive layer (aluminum or copper) for electrical conductivity and a second conductive layer (molybdenum-nickel alloy) for corrosion and oxidation protection. This composite structure combines the advantages of both materials to achieve reliable electrical performance while preventing degradation from environmental exposure.
Solution Approach 2:
The molybdenum-nickel alloy layer serves as an intermediary protective barrier between the reactive conductive material (aluminum or copper) and the corrosive environment. This intermediate layer prevents direct contact between the conductive material and oxidizing agents, thereby protecting the electrical conductors without compromising their functionality.
2Reliability
If a protective layer is added to prevent corrosion, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent specifies precise compositional parameters for the molybdenum-nickel alloy (nickel content of 10-50 atomic percent) to optimize both protective functionality and manufacturability. By defining specific composition ranges, the patent ensures consistent performance while maintaining compatibility with existing thin film deposition processes used in display manufacturing.
Data Source
AI summary
A display substrate including a base substrate, a first thin film transistor disposed on the base substrate and including a first gate electrode and a first semiconductor active layer; a second thin film transistor electrically connected to the first thin film transistor, the second thin film transistor including a second gate electrode and a second semiconductor active layer; and an organic light emitting device electrically connected to the second thin film transistor. The first semiconductor active layer includes a first material and the second semiconductor active layer includes a second material different from the first material.