TFT Electrode Edge Anti-Reflection Structure for Light Leakage
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Solution Overview
Problem
In borderless liquid crystal display devices with thin film transistors facing outwardly, the undercut angle of metal electrodes reflects ambient light, causing light leakage and reducing contrast ratios due to the backlight illumination.
Innovation Solution
An electrode structure with a buffer layer, an anti-reflection layer covering the edge of the electrode, and an undercut structure formed between the anti-reflection layer and the buffer layer, where the anti-reflection layer is made of metal oxide and extends to contact the buffer layer, reducing reflectivity and light leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If the thin film transistor side faces outwardly for borderless design, then the display panel achieves borderless appearance and flexible printed circuit bonding, but the metal electrode reflects ambient light causing light leakage and reduced contrast ratio
Solution Approach 1:
An anti-reflection layer is introduced as an intermediary between the metal electrode and the ambient light environment. This layer specifically targets the undercut angle region where light reflection occurs, absorbing or scattering the reflected light while allowing the TFT to maintain its outward-facing configuration for borderless design.
Solution Approach 2:
The anti-reflection treatment is applied locally only to the undercut angle region of the metal electrode rather than uniformly across the entire electrode structure. This localized approach addresses the specific light reflection problem at the electrode edge while maintaining the overall electrode functionality and enabling the borderless display design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces reflectivity and eliminates light leakage in thin film transistors with outward-facing sides, enhancing the contrast ratio of display products by using a metal oxide anti-reflection layer to cover the electrode edges and form an undercut structure.
Implementation Method 1
the undercut angle of the copper electrode, reflection occurs, causing light leakage
Implementation Method 2
an anti-reflection layer disposed at the edge of the electrode, wherein the anti-reflection layer is configured to surround and cover the edge of the electrode
Data Source
AI summary
An electrode structure is disclosed, which includes a buffer layer disposed on a substrate; and an electrode disposed on a surface of the buffer layer away from the substrate, an edge of the electrode including an extension surface extending from a surface of the electrode away from the substrate, and the extension surface is in contact with a surface of the buffer layer and forms an included angle with a surface of the buffer layer contacting the electrode. An anti-reflection layer is disposed at the edge of the electrode, the anti-reflection layer surrounds and covers the edge of the electrode, and the anti-reflection layer extends to be in contact with the buffer layer. An undercut structure is formed between an outer surface of the anti-reflection layer and the surface of the buffer layer.