Thin Film Transistor Electrode Light Shielding Design
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Solution Overview
Problem
Current low temperature polysilicon thin film transistors used in liquid crystal display panels face manufacturing complexities, high production costs, and display defects such as squares and bright spots due to etching residues, which affect product yield and performance.
Innovation Solution
A thin film transistor design where the first electrode and second electrode are layered, with the first electrode serving as a light shielding layer and the active layer connected through vias in a buffer and insulating layer, reducing etching residues and eliminating the need for a separate light shielding structure, while allowing for efficient electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate light shielding structure is added to prevent backlight illumination, then photo-generated leakage current is suppressed, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines the light shielding function with the first electrode by using the same conductive material layer for both electrical connection and light shielding purposes. The first electrode is positioned to overlap with the active layer in planar projection, creating a dual-function structure that eliminates the need for a separate light shielding layer while suppressing photo-generated leakage current.
Solution Approach 2:
The first electrode serves multiple functions: it provides electrical connection to the active layer and simultaneously acts as a light shielding structure. This multi-functional design reduces the overall device complexity and manufacturing steps while achieving both electrical and optical control requirements.
2Object-affected harmful factors
If traditional multi-layer electrode structure with separate light shielding is used, then light shielding effectiveness is achieved, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent merges the light shielding function into the first electrode structure, eliminating the need for separate light shielding layers. The first electrode is formed in the same processing step as other conductive layers and is positioned to provide both electrical connection and light shielding, thereby reducing manufacturing steps and costs.
Solution Approach 2:
The first electrode is designed to perform dual functions: electrical connection to the active layer and light shielding. This multi-functional approach simplifies the manufacturing process by reducing the number of layers and processing steps required, while maintaining effective light shielding to prevent photo-generated leakage current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces display defects, lowers production costs, and improves the process yield by minimizing etching residues and complexity, while maintaining effective light shielding and electrical performance.
Implementation Method 1
the first electrode comprises a light shielding material, and an orthographic projection of the first electrode on the substrate at least partially overlaps an orthographic projection of the active layer on the substrate
Data Source
AI summary
A thin film transistor, method of manufacturing the thin film transistor, an array substrate comprising the thin film transistor, and a display device comprising the array substrate. The thin film transistor comprises a substrate; a first electrode on the substrate; an active layer on a side of the first electrode away from the substrate; and a second electrode on a side of the active layer away from the first electrode. The first electrode and the second electrode are connected to the active layer, respectively. are also disclosed.