Thin-Film Transistor Electrode Stack for Low Reflectance and Resistance
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Solution Overview
Problem
Existing thin film transistors used in display devices suffer from high reflectance, which can lead to increased glare and reduced visibility, especially in bright environments, and also have high resistance, affecting their performance.
Innovation Solution
A thin film transistor design featuring a double-layer structure for the source and drain electrodes, where the first layer is a metal oxide containing a group 6B element and the second layer is a low-resistance metal, combined with a contact portion made of a transparent conductive oxide, to reduce reflectance and maintain low resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single-layer metal electrode structure is used, then manufacturing is simple, but reflectance is high and visibility is reduced
Solution Approach 1:
The electrode structure is segmented into multiple layers: a first electrode layer (MoTi alloy) and a second electrode layer (low-resistance metal). This segmentation allows each layer to perform different functions - the first layer controls reflectance while the second layer provides low resistance, resolving the contradiction between manufacturing simplicity and reflectance control.
Solution Approach 2:
The patent uses composite material structures where the first electrode layer is a MoTi alloy and the second electrode layer is a low-resistance metal. This composite approach enables simultaneous achievement of low reflectance (through the MoTi alloy's optical properties) and low resistance (through the second metal layer's electrical properties).
2Illumination intensity
If a double-layer electrode structure with low reflection characteristics is used, then reflectance is reduced, but manufacturing complexity increases
Solution Approach 1:
By dividing the electrode into two functional layers with distinct purposes (optical control and electrical conduction), the complexity is managed through clear functional segmentation. Each layer can be optimized independently while maintaining overall system performance.
Solution Approach 2:
Different regions of the electrode structure have different properties: the first layer (MoTi alloy) is optimized for optical characteristics (low reflectance), while the second layer is optimized for electrical characteristics (low resistance). This local quality differentiation resolves the complexity issue by assigning specific functions to specific layers.
3Reliability
If low-resistance metal is used in the second layer, then electrical conductivity is improved, but reflectance may increase
Solution Approach 1:
The electrode is segmented into two layers where the first layer (MoTi alloy) handles optical properties and the second layer (low-resistance metal) handles electrical properties. This segmentation allows the low-resistance metal to provide excellent conductivity without compromising reflectance control, as the MoTi alloy layer maintains the optical characteristics.
Solution Approach 2:
The composite structure combines MoTi alloy (with favorable optical properties for low reflectance) and low-resistance metal (with excellent electrical conductivity). This composite material approach allows simultaneous optimization of both optical and electrical properties without compromise.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses reflectance while maintaining low resistance, enhancing visibility and performance in display devices by reducing glare and improving electrical conductivity.
Implementation Method 1
each of the source electrode and the drain electrode includes a first layer and a second layer on the first layer... the first layer includes a metal oxide (MOx) containing an element M; the second layer includes a low resistance metal
Implementation Method 2
the second layer includes a low resistance metal... connected to the active layer through a first contact portion
Data Source
AI summary
A thin film transistor, a method of manufacturing the same, and a display apparatus including the same are disclosed. The thin film transistor includes an active layer, a gate electrode spaced apart from the active layer and overlapping at least part of the active layer, a source electrode, and a drain electrode spaced apart from the source electrode and connected to the active layer. Each of the gate, source, and drain electrodes include a first layer and a second layer on the first layer. Each of the source, drain electrodes is connected to the active layer through a first contact portion, the first contact portion contacts the second layer of the source electrode and the second layer of the drain electrode, respectively, the first layer includes a metal oxide containing an element M, the second layer includes a low resistance metal, and the element includes a group 6B element.