TFT Electrode Overlap Reduces Element Diffusion
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Solution Overview
Problem
Existing thin-film transistors (TFTs) face challenges in reducing element diffusion between conductorization regions and channel regions, which affects the performance and reliability of small-sized TFTs.
Innovation Solution
The proposed TFT design includes a unique arrangement where the second source/drain electrode portion is positioned on the interlayer insulation layer away from the substrate, with its orthographic projection overlapping the conductorization regions. This configuration generates carrier electrons in the conductorization region, enhancing conductorization without the need for conventional conductorization processes, thereby reducing element diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductorization processes are used, then conductorization regions can be formed, but element diffusion between conductorization regions and channel region occurs, affecting TFT performance and reliability
Solution Approach 1:
The patent removes the conventional conductorization process step entirely. Instead of using plasma or chemical treatments to create conductorization regions, the invention uses a novel electrode configuration where the second source/drain electrode portion is positioned to overlap the conductorization regions in plan view, generating carrier electrons through field effect to achieve conductorization without the harmful diffusion processes
Solution Approach 2:
The patent introduces the second source/drain electrode portion as an intermediary element. This electrode portion, positioned on the interlayer insulation layer with overlapping projection, acts as a mediator that generates carrier electrons in the conductorization regions through electric field effects, replacing the need for direct conductorization processes that cause element diffusion
2Productivity
If small-sized TFTs are prepared, then pixel density can be increased, but element diffusion becomes more severe, reducing TFT reliability
Solution Approach 1:
By eliminating the conductorization process entirely and replacing it with field-effect carrier generation from the second source/drain electrode portion, the invention removes the source of element diffusion. This enables the fabrication of small-sized TFTs with high pixel density while maintaining reliability, as the harmful diffusion process is completely avoided
Solution Approach 2:
The invention changes the fundamental mechanism of conductorization from chemical/plasma-based processes to field-effect-based carrier generation. This parameter change in the conductorization mechanism allows for smaller TFT dimensions without the element diffusion problems that plague conventional approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively enhances the conductorization of the TFTs, reducing element diffusion and improving the reliability and performance of small-sized TFTs, which is beneficial for increasing pixel density in display apparatuses.
Implementation Method 1
the orthographic projection of the second source/drain electrode portion on the active layer overlaps with the conductorization regions... generates carrier electrons in the conductorization region, enhancing the conductorization
Data Source
AI summary
The present disclosure provides a display apparatus, an array substrate, and a thin-film transistor. The thin-film transistor includes: an active layer, including a channel region and two source/drain regions, the two source/drain regions are at two opposite sides of the channel region, the source/drain regions are spaced apart from the channel region, the regions of the active layer between the source/drain regions and the channel region are conductorization regions; the first source/drain electrode portion and the second source/drain electrode portion are correspondingly connected with the two source/drain regions, the second source/drain electrode portion is on a side of the interlayer insulation layer away from the substrate, and an orthographic projection of the second source/drain electrode portion on the active layer overlaps with the conductorization region. The present disclosure is beneficial for the preparation of small-sized thin-film transistors