Thin-Film Transistor Electrode Oxide Layer Against Metal Splashing
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Solution Overview
Problem
The susceptibility of metal layers in thin-film transistor source-drain electrodes to subsequent preparation processes leads to the formation of splashed metal particles that diffuse into the active layer, affecting conductivity and causing device failure, particularly in plasma bombardment processes during passivation layer preparation.
Innovation Solution
A thin-film transistor structure is developed with a source-drain electrode comprising an electrode layer and a protective layer made of a metal oxide, which covers the electrode layer and its side faces, formed through oxidation treatment, preventing metal particles from splashing onto the active layer and improving conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal layer (e.g., Cu) is used as source-drain electrode material to achieve low resistivity and good electromigration resistance, then the electrical performance is improved, but the metal layer becomes susceptible to plasma bombardment during passivation layer preparation, causing metal particles to splash and diffuse into the active layer, leading to conductivity issues and device failure
Solution Approach 1:
An oxide layer is formed on the surface of the metal layer before the plasma bombardment process occurs. This preliminary oxidation creates a protective barrier that prevents metal particles from splashing during subsequent passivation layer preparation, thereby resolving the contradiction between maintaining good electrical performance and preventing metal particle contamination
Solution Approach 2:
The oxide layer acts as an intermediary between the metal layer and the plasma environment. It serves as a protective interface that allows the metal layer to maintain its low resistivity and electromigration resistance while preventing direct interaction between plasma and metal atoms that would cause particle splashing and diffusion into the active layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure prevents metal particle splashing, enhancing transistor characteristics and yield by avoiding conductivity issues and improving manufacturing efficiency.
Implementation Method 1
oxidizing the source-drain electrode for forming a layer of an oxide film of the first metal element on a surface of the electrode layer
Data Source
AI summary
Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.