Thin Film Transistor Electrode Segmentation for Heat Management

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Solution Overview

Problem

Thin film transistors experience excessive local heat during long-time operation, leading to damage due to current convergence between the source and drain electrodes.

Innovation Solution

The design includes an active layer with semiconductor material and a source-drain electrode layer with alternately arranged electrode strips, where insulating material is used at specific regions between the electrode ends to disperse current and reduce heat generation, preventing damage from localized heating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If current flows between source and drain electrodes during long-time operation, then the thin film transistor maintains electrical conduction function, but excessive local heat is generated at the electrode ends causing damage

Engineering Contradiction:
Improvetransistor durabilityVSAvoidlocal heat at electrode ends
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The source and drain electrodes are segmented into multiple electrode strips instead of continuous electrodes. This segmentation divides the current path into multiple parallel channels, reducing current density at any single location and thereby reducing localized heat generation at the electrode ends.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating layer is introduced as an intermediary between the electrode strips and the active layer. This insulating layer prevents direct current convergence at the electrode ends while maintaining electrical conduction through the active layer, effectively reducing local heat generation without compromising the transistor's electrical function.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If electrode strips are arranged alternately to disperse current, then heat generation is reduced, but the device structure becomes more complex

Engineering Contradiction:
Improveheat at electrode endsVSAvoidelectrode structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The electrodes are divided into multiple alternating strips that can be formed using standard photolithography and patterning processes. This segmentation achieves current dispersion while maintaining compatibility with conventional manufacturing techniques, limiting the increase in device complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The alternating electrode strip structure serves multiple functions: it disperses current to reduce heat, maintains electrical conduction through the active layer, and can be integrated with standard thin-film transistor fabrication processes. This multi-functionality justifies the increased structural complexity by delivering multiple benefits from a single design feature.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively disperses current and reduces heat at the ends of the electrode strips, preventing damage to the thin film transistor during prolonged operation.

Implementation Method 1

at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Data Source

PatentUS11309392B2Thin film transistor and method for manufacturing the same, and display panel
Publication Date: 2022.04.19 BOE TECHNOLOGY GROUP CO LTD
  • US11309392B2 patent drawing
  • US11309392B2 patent drawing
  • US11309392B2 patent drawing

AI summary

The present disclosure provides a thin film transistor, a display panel and a method for manufacturing the thin film transistor. The thin film transistor includes an active layer and a source-drain electrode layer, the source-drain electrode layer includes a first electrode having at least one first electrode strip and a second electrode having at least one second electrode strip, the at least one first electrode strip and the at least one second electrode strip are alternately arranged at intervals, and at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode, on the layer where the active layer is located.