TFT Electrode Single-Patterning Mask Reduction
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Solution Overview
Problem
The manufacturing process of thin film transistors (TFTs) and array substrates for display devices is complex, requiring multiple patterning processes and masks, which limits productivity and increases production costs.
Innovation Solution
The method involves forming a gate electrode, source electrode, and drain electrode in a single patterning process, reducing the number of masks and processes needed, and allowing for a top-gate or bottom-gate structure with a gate insulating layer between the electrodes, while also forming pixel and common electrodes in fewer steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning processes are used to form gate electrode, source electrode, and drain electrode separately, then the manufacturing precision and structural control are improved, but the device complexity and production cost increase
Solution Approach 1:
The patent combines the formation of gate electrode, source electrode, and drain electrode into a single patterning process. A conductive layer is deposited and patterned in one step to simultaneously create all three electrodes, eliminating the need for separate patterning processes for each electrode. This merging approach reduces manufacturing complexity while maintaining structural control through precise single-step patterning.
Solution Approach 2:
The conductive layer serves multiple functions simultaneously - it forms the gate electrode, source electrode, and drain electrode all in one process. This multi-functional approach allows a single material layer to fulfill multiple structural roles, simplifying the overall manufacturing process while ensuring consistent electrical properties across all electrodes.
2Manufacturing precision
If multiple patterning processes and masks are used to form TFT components, then the manufacturing precision is improved, but the productivity decreases and production cost increases
Solution Approach 1:
The patent merges the patterning of gate, source, and drain electrodes into a single process step. By depositing a conductive layer and patterning it once to form all three electrodes simultaneously, the manufacturing throughput is significantly improved while maintaining precise electrode positioning through advanced single-step patterning techniques.
3Manufacturing precision
If multiple patterning processes are used to form pixel electrode and common electrode, then the manufacturing precision is improved, but the device complexity and production cost increase
Solution Approach 1:
The patent combines the formation of pixel electrode and common electrode into a single patterning process. A conductive layer is deposited and patterned in one step to simultaneously create both electrode types, eliminating the need for separate patterning processes and reducing overall device complexity while maintaining pattern accuracy.
Data Source
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AI summary
A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of a TFT (200) includes: forming an active layer (210), a gate electrode (232), a source electrode (231) and a drain electrode (233) respectively electrically connected with the active layer (210), and a gate insulating layer (220) disposed between the gate electrode (232) and the active layer (210), so that the gate electrode (232), the source electrode (231) and the drain electrode (233) are formed in the same patterning process. The method can reduce the number of masks used in the manufacturing process of the TFT (200) or an array substrate (20), reduce the technology process, improve the productivity, and reduce the production cost.