Thin Film Transistor Electrode Stacking for High Aperture Ratio
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Solution Overview
Problem
Current thin film transistors occupy large areas, have low aperture ratios, and low resolution, which limits the development of high-resolution display devices required for augmented reality (AR) and virtual reality (VR) technologies, due to the design of U-shaped or L-shaped active layers and spaced source/drain electrodes.
Innovation Solution
A thin film transistor design where the first and second source/drain electrodes are arranged in different layers, with the active layer having a rectangular shape, allowing for independent electrical connection and reducing the gap between electrodes, thereby minimizing the occupied area and increasing the aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If source/drain electrodes are arranged in the same layer with spacing, then electrical connection is achieved, but the occupied area increases and aperture ratio decreases
Solution Approach 1:
The patent transitions from a planar two-dimensional arrangement of source/drain electrodes to a three-dimensional stacked configuration. The first source/drain electrode is positioned at a first position, the active layer at a second position, and the second source/drain electrode at a third position in the vertical dimension. This dimensional change allows electrical connection while reducing the horizontal occupied area and increasing the aperture ratio.
2Manufacturing precision
If active layer has U-shaped or L-shaped design, then electrical connection is achieved, but the occupied area increases and resolution decreases
Solution Approach 1:
The patent segments the source/drain electrode function into two separate electrodes positioned at different vertical levels. The first source/drain electrode connects to one end of the active layer, while the second source/drain electrode connects to the other end. This segmentation eliminates the need for U-shaped or L-shaped continuous electrodes, reducing the occupied area and improving resolution.
3Area of stationary object
If source/drain electrodes are spaced apart, then electrical connection is achieved, but the gap increases and aperture ratio decreases
Solution Approach 1:
The patent resolves the spacing issue by moving the second source/drain electrode to a different vertical level (third position) rather than spacing it horizontally from the first source/drain electrode (first position). The active layer (second position) bridges the connection vertically. This eliminates the horizontal gap, increases the aperture ratio, while maintaining electrical connection through the vertical stacking configuration.
Data Source
AI summary
The present application provides a thin film transistor, an array substrate, a display device and a method of fabricating a thin film transistor. According to embodiments of the present application, the thin film transistor includes: a substrate; a first source/drain electrode on the substrate; an active layer at a side of the first source/drain electrode facing away from the substrate; and a second source/drain electrode at a side of the active layer facing away from the first source/drain electrode. The first source/drain electrode and the second source/drain electrode are electrically connected to the active layer independently.