TFT Etch-Stop Layer Single Patterning Process
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Solution Overview
Problem
The complex manufacture process and increased production cost of thin film transistors (TFTs) due to the need for an additional etching process to form an etch-stop layer on the oxide semiconductor layer, which protects the channel region from corrosion during the formation of source and drain electrodes.
Innovation Solution
A method to form both the semiconductor layer and the etch-stop layer through a single patterning process, where the etch-stop layer covers only the channel region, simplifying the manufacturing process and preventing semiconductor layer corrosion during electrode formation without additional processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an additional etching process is used to form an etch-stop layer on the oxide semiconductor layer, then the channel region is protected from corrosion during source and drain electrode formation, but the manufacture process becomes more complex and production cost increases
Solution Approach 1:
The patent combines the formation of the etch-stop layer and the semiconductor layer into a single sputtering process step. By depositing both layers simultaneously in one process, the manufacture complexity is reduced while the etch-stop layer continues to provide corrosion protection to the channel region during subsequent electrode formation
2Reliability
If an additional etching process is used to form an etch-stop layer, then the semiconductor layer is protected from corrosion, but the production cost increases
Solution Approach 1:
The patent merges the etch-stop layer formation with the semiconductor layer deposition in a single sputtering process. This consolidation eliminates the need for separate etching steps and reduces material waste, thereby lowering production costs while maintaining the protective function against corrosion
3Device complexity
If the source electrode and drain electrode are directly lapped onto the oxide semiconductor layer, then the structure is simple, but the channel region is obviously corroded by the etching process
Solution Approach 1:
The patent applies the etch-stop layer to the channel region before the source and drain electrodes are formed. This preliminary protective action prevents corrosion damage to the semiconductor layer during the subsequent electrode etching process, maintaining channel region integrity while preserving structural simplicity
Data Source
AI summary
A TFT, a manufacturing method thereof, and a display device are provided. The TFT includes a semiconductor layer and an etch-stop layer merely covering a channel region of the semiconductor layer. The semiconductor layer and the etch-stop layer are formed through a single patterning process.