Thin Film Transistor Etching Blocking Layer Corrosion Prevention
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Solution Overview
Problem
The existing manufacturing processes for metal oxide semiconductor transistors face performance issues due to corrosion from metal etching liquids, which affect the semiconductor material between the source and drain electrodes.
Innovation Solution
A method is introduced to form an etching blocking layer on the semiconductor layer, using ion injection and photoresist patterning, allowing the source and drain electrodes to partially overlap with the etching blocking layer, thereby preventing corrosion from metal etching liquids during the formation of the electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wet etching is used to form metal electrodes, then the metal electrode formation process is simple and efficient, but the metal etching liquid corrodes the semiconductor material between source and drain electrodes, degrading transistor performance
Solution Approach 1:
The patent introduces an etching blocking layer as an intermediary substance between the semiconductor layer and the metal etching liquid. This blocking layer selectively prevents the etching liquid from contacting and corroding the semiconductor material in the channel region, while allowing the etching process to proceed normally for electrode formation. The blocking layer thus mediates between the need for efficient wet etching and the need to protect semiconductor integrity.
Solution Approach 2:
The etching blocking layer is applied selectively only to specific regions of the semiconductor layer where protection is needed (the channel region between source and drain electrodes). This localized application allows the semiconductor to maintain its original properties in unprotected areas while gaining corrosion resistance where required, achieving local quality enhancement without compromising overall device structure.
2Reliability
If an etching blocking layer is introduced to prevent corrosion, then transistor performance is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent combines the formation of the etching blocking layer with existing manufacturing steps such as photoresist patterning and ion injection processes that are already part of the standard fabrication flow. By merging the blocking layer formation into these existing steps rather than adding completely separate processes, the patent reduces the net increase in manufacturing complexity while still achieving the protective function.
Solution Approach 2:
The etching blocking layer is formed through ion injection that modifies the semiconductor layer itself, rather than requiring a completely separate material deposition step. The semiconductor layer essentially creates its own protective layer through in-situ modification, which simplifies the overall process by eliminating the need for additional external material layers and their associated deposition and removal steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents corrosion and improves the performance of the thin film transistor by simplifying the manufacturing process and avoiding the introduction of new material layers, enhancing the reliability and efficiency of the transistor production.
Implementation Method 1
performing a modification treatment on a surface layer of a region of the semiconductor layer, so that the region of the semiconductor layer has a portion in a first direction perpendicular to the semiconductor layer formed as an etching blocking layer
Data Source
AI summary
A thin film transistor, a manufacturing method for an array substrate, the array substrate, and a display device are provided. The manufacturing method for a thin film transistor includes: forming a semiconductor layer; performing a modification treatment on a surface layer of a region of the semiconductor layer, so that the region of the semiconductor layer has a portion in a first direction perpendicular to the semiconductor layer formed as an etching blocking layer, portions of the semiconductor layer on both sides of the etching blocking layer in a second direction parallel to a surface of the semiconductor layer remaining unmodified; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode being formed on both sides of a center line of the region perpendicular to the second direction, and spaced from each other in the second direction.