Thin Film Transistor With Flexible Polymer Gate Insulator
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Solution Overview
Problem
Existing thin film transistors have fixed parameters such as electrical current and capacitance, limiting their applications due to inability to adjust these characteristics.
Innovation Solution
A thin film transistor with a top gate structure and a flexible polymer insulative layer, where the capacitance and current can be controlled by applying pressure, utilizing a semiconductor carbon nanotube layer and conductive electrodes, allowing for adjustable parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional thin film transistor structure is used, then manufacturing is simple, but parameters cannot be adjusted
Solution Approach 1:
The patent applies the dynamics principle by making the insulative layer flexible rather than rigid, allowing it to dynamically change its thickness under applied pressure. This enables the transistor parameters (capacitance, current) to be adjusted in real-time by controlling the pressure on the gate electrode, transforming a static device into a dynamically adjustable one without complex additional components
Solution Approach 2:
The patent implements parameter changes by utilizing the pressure-dependent thickness variation of the flexible insulative layer. When pressure is applied to the gate electrode, the insulative layer compresses, changing its thickness parameter, which directly alters the capacitance and electrical characteristics of the transistor. This provides a simple mechanism to adjust device parameters through physical pressure control
2Adaptability or versatility
If fixed parameter thin film transistor is used, then device structure is simple, but application range is limited
Solution Approach 1:
The patent enables parameter changes by using a flexible insulative layer whose thickness can be varied through applied pressure. This allows the transistor to adapt its electrical parameters (capacitance, current flow) to match different application requirements, expanding the range of usable applications while maintaining simple operational control through pressure adjustment
3Adaptability or versatility
If rigid insulative layer is used, then structural stability is high, but parameter adjustment capability is lost
Solution Approach 1:
The patent employs a flexible polymer insulative layer instead of a rigid material. This flexible film can be compressed by applied pressure, reducing its thickness and thereby adjusting the transistor's capacitance and electrical parameters. The flexibility enables parameter control while the material properties maintain sufficient structural stability for device operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thin film transistor's parameters can be dynamically adjusted by pressure, enhancing its accuracy and versatility for use in various electronic applications.
Implementation Method 1
When a pressure is applied on the gate electrode, the semiconductor layer may generate a number of carriers... parameters of the thin film transistor (e.g. electrical current between the source electrode and the gate electrode, the gate electrode capacitance, etc) are fixed values and may not be adjusted
Implementation Method 2
the insulative layer is a flexible polymer layer... When a pressure is applied on the gate electrode, the semiconductor layer may generate a number of carriers
Implementation Method 3
When a pressure is applied on the gate electrode, the semiconductor layer may generate a number of carriers. When the amount of the carriers reaches a certain level, the source electrode and the drain electrode may form an electrically conductive pathway
Implementation Method 4
The source electrode, the drain electrode, and the gate electrode are all made of electrically conductive materials. The electrically conductive materials usually are metals or alloys
Data Source
AI summary
A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa.