Single-Gate TFT Floating Electrode Leakage Reduction
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Solution Overview
Problem
Small- and middle-sized LCDs face challenges with high-precision requirements, as single-gate TFTs are prone to voltage increases, current leakage, and breakdown due to limited space, whereas double-gate TFTs provide redundancy but are difficult to implement in tiny pixels.
Innovation Solution
The implementation of a liquid crystal display device with a TFT substrate featuring a semiconductor layer connected via through-holes to data lines and a contact electrode, accompanied by a floating electrode formed from the same material as the gate electrode, which reduces electric field intensity and prevents leakage, even in single-gate configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single-gate TFT is used in high-precision small pixels, then the pixel size can be reduced to achieve high precision, but voltage increases causing current leakage and TFT breakdown
Solution Approach 1:
A floating electrode is introduced as an intermediary element between the gate electrode and the source/drain electrodes. This floating electrode acts as a mediator to distribute and reduce the electric field intensity in the channel region, preventing direct high-voltage stress on the single-gate TFT structure while maintaining the compact pixel design required for high precision displays
2Reliability
If a double-gate TFT is used to reduce leakage current and improve reliability, then TFT reliability improves, but the device complexity and space requirements increase making it difficult to implement in tiny pixels
Solution Approach 1:
The gate structure is segmented into a gate electrode and a separate floating electrode that are formed simultaneously but function independently. This segmentation allows the floating electrode to specifically address leakage current issues without requiring the full complexity of a double-gate TFT structure, achieving enhanced reliability while maintaining simpler fabrication processes
Solution Approach 2:
The floating electrode is positioned in a different spatial dimension (above the semiconductor layer) relative to the gate electrode, creating a three-dimensional electric field distribution. This dimensional arrangement allows the system to achieve double-gate-like leakage suppression effects without requiring a second gate structure in the planar dimension, thus reducing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of single-gate TFTs by reducing current leakage and preventing breakdown, ensuring high-precision display performance even in small pixels by weakening electric fields and minimizing space requirements.
Implementation Method 1
a floating electrode is formed between the gate electrode and the second through-hole on a layer above the semiconductor layer, the floating electrode being fabricated with the same material and at the same time as the gate electrode
Data Source
AI summary
The invention provides a high-precision display device having a reliable top- and single-gate TFT causing less current leakage. Part of a gate line 10 that crosses a semiconductor layer 103 acts as a gate electrode to form a TFT. The semiconductor layer 103 is connected to a data line 20 via a through-hole 140 on one side of the TFT and also connected to a contact electrode 107 via a through-hole 120 on the other side of the TFT. A floating electrode 30 is formed between the TFT and the through-hole 140 or between the TFT and the through-hole 120. The floating electrode 30 is formed on a layer above the semiconductor layer 103 with the use of the same material and at the same time as the gate electrode.