Thin-Film Transistor Floating Gate Layout for On-Current and S-Factor
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Solution Overview
Problem
Thin film transistors in display devices face a trade-off between achieving high on-current and a large S-factor, making it difficult to simultaneously enhance both characteristics.
Innovation Solution
A thin film transistor substrate design featuring a first and second gate electrode with a floating structure, where the second gate electrode is spaced apart and not electrically connected, allowing for improved S-factor and on-current characteristics without degrading performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the on-current is increased to improve switching characteristics, then the S-factor is reduced, making it difficult to achieve both high on-current and large S-factor simultaneously
Solution Approach 1:
The gate electrode is divided into two separate gate electrodes (first gate electrode and second gate electrode) that are spaced apart from each other. This segmentation allows independent control of the electric field distribution, enabling simultaneous optimization of on-current (through first gate electrode) and S-factor (through second gate electrode) without the trade-off that exists in conventional single-gate structures
Solution Approach 2:
The invention transitions from a conventional single-plane gate structure to a multi-dimensional gate configuration where two gate electrodes are positioned at different locations and orientations relative to the active layer. This dimensional change enables independent manipulation of electric field characteristics to simultaneously enhance both on-current and S-factor
Data Source
AI summary
A thin film transistor substrate and a display apparatus comprising the same include a substrate; an active layer disposed on the substrate; a first gate electrode disposed on the active layer; and a second gate electrode disposed on the active layer and disposed to be spaced apart from the first gate electrode; and a source electrode disposed on the active layer and connected to one side of the active layer and a drain electrode disposed on the active layer and connected to another side of the active layer, wherein the second gate electrode having a floating structure.