Thin Film Transistor Gate Protrusions for ON Current
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Solution Overview
Problem
Prior art thin film transistors (TFTs) have low ON current, low opening ratio, and high ON voltage due to the gate electrode only influencing the channel from the bottom, resulting in inefficient current flow and poor performance.
Innovation Solution
The introduction of gate electrode protrusions on both sides of the channel, covered by the gate insulating layer, creates multiple current paths, enhancing the ON current and reducing capacitance, allowing for a smaller TFT design with improved opening ratio and lower ON voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the gate electrode is located at the bottom of the channel influencing the channel only from the bottom, then the structure is simple, but the ON current is low and the opening ratio is low
Solution Approach 1:
The gate electrode is extended to form protrusions that reach the both sides of the channel in the width direction, transforming the gate structure from a single-plane configuration to a multi-dimensional configuration. This allows the gate electrode to influence the channel from multiple directions (bottom and sides), thereby increasing the effective gate control area and enhancing the ON current without significantly complicating the overall device structure.
2Ease of manufacture
If the gate electrode is located at the bottom of the channel influencing the channel only from the bottom, then the manufacturing process is simple, but the opening ratio is low
Solution Approach 1:
The gate electrode protrusions extend to the both sides of the channel, utilizing the width direction dimension to increase the effective gate control area. This dimensional extension allows for a larger opening ratio within the same device footprint, as the gate structure now occupies space more efficiently in three dimensions rather than being confined to a single plane.
3Device complexity
If the gate electrode influences the channel only from the bottom, then the capacitance is high, but the structure is simple
Solution Approach 1:
By extending the gate electrode to form protrusions at both sides of the channel, the gate control is distributed across multiple spatial locations. This multi-point control reduces the concentration of electric field lines and decreases the overall capacitance between the gate and channel, leading to lower power consumption and improved device efficiency while maintaining structural simplicity.
Data Source
AI summary
A thin film transistor, an array substrate including the thin film transistor and a display device. The thin film transistor includes: a gate electrode (100), a gate insulating layer (200), an active layer (300) and a source/drain layer (400) that are successively stacked. The source/drain layer (400) comprises a source electrode (401) and a drain electrode (402) with a gap therebetween, and the active layer (300) forms a channel (301) in a region corresponding to the gap. The gate electrode (100) has a gate electrode protrusion (101) on at least one side of the channel (301) in its width direction; and the gate insulating layer (200) covers the gate electrode (100) and the gate electrode protrusion (101).