Thin Film Transistor Groove Design for Diffusion Blocking
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Solution Overview
Problem
The diffusion effect in thin film transistors can cause the channel region of the active layer to become conductive, leading to poor uniformity and undesirable phenomena such as bright spots on display panels.
Innovation Solution
A thin film transistor design featuring a base substrate with an active layer, source, and drain contact regions, where at least one of the contact regions includes alternating first and second sub-grooves on either side of the channel region, and an insulating or light-shielding layer with corresponding grooves to prevent conductive diffusion, ensuring a longer transmission path and distorted atom arrangement to block conductive effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive treatment is performed on source and drain contact regions, then electrical conductivity is improved, but channel region may become conductive due to diffusion effect
Solution Approach 1:
The source and drain contact regions are segmented into multiple sub-regions by forming grooves (first grooves in insulating layer, second grooves in light-shielding layer, and corresponding sub-grooves in active layer). This segmentation divides the conductive treatment areas into isolated segments, preventing continuous diffusion paths from reaching the channel region while maintaining necessary electrical conductivity in each segment.
Solution Approach 2:
The insulating layer and light-shielding layer act as intermediary barriers between the conductive source/drain contact regions and the channel region. These intermediate layers with embedded grooves control and limit the diffusion process, allowing beneficial conductive treatment while blocking harmful diffusion effects from reaching the channel.
2Object-affected harmful factors
If grooves are formed in insulating and light-shielding layers, then diffusion path is extended and conductive effect is blocked, but device structure becomes more complex
Solution Approach 1:
The insulating layer and light-shielding layer are combined in a stacked configuration, with grooves formed in both layers at corresponding positions. This merging approach allows the structure to serve dual functions: electrical insulation and light shielding, while the aligned grooves in both layers work together to block diffusion paths without requiring separate independent structures.
Solution Approach 2:
The multi-layer groove structure serves multiple functions simultaneously: the insulating layer provides electrical insulation, the light-shielding layer blocks light, and the grooves in both layers collectively extend the diffusion path and prevent conductive effects. This multi-functionality reduces the need for additional separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the performance and uniformity of the thin film transistor by extending the conductive diffusion path and preventing its influence on the channel region, resulting in improved display quality and uniformity.
Implementation Method 1
Due to the diffusion effect, there is also a risk that the channel region of the active layer is transformed into a conductor
Data Source
AI summary
The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.