Thin-Film Transistor Layer Structure for Hydrogen Diffusion Blocking
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Solution Overview
Problem
The integration of polysilicon and oxide semiconductor layers in thin film transistors on the same substrate leads to hydrogen diffusion, causing undesirable properties and reliability issues due to differences in resistivity and hydrogen blocking performance.
Innovation Solution
A semiconductor device structure incorporating a silicon semiconductor layer, a metal oxide semiconductor layer, and a block layer with low hydrogen diffusion, where the block layer is positioned between the insulating films to suppress hydrogen diffusion and improve reliability, and is preferably formed of aluminum oxide to enhance manufacturing efficiency and light transmissivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a polysilicon semiconductor layer and an oxide semiconductor layer are formed on the same substrate, then both types of thin film transistors can be integrated, but hydrogen diffusion from the polysilicon layer to the oxide semiconductor layer causes the oxide semiconductor layer to become low resistive and lose desired properties
Solution Approach 1:
An insulating film with high hydrogen blocking performance is introduced as an intermediary layer between the polysilicon semiconductor layer and the oxide semiconductor layer. This mediator prevents hydrogen diffusion from the polysilicon layer to the oxide semiconductor layer, thereby maintaining the desired high-resistive properties of the oxide semiconductor layer while allowing both types of transistors to coexist on the same substrate.
Solution Approach 2:
The structure is segmented into distinct layers with the insulating film positioned specifically between the polysilicon and oxide semiconductor layers. This segmentation isolates the oxide semiconductor layer from hydrogen contamination by creating a physical barrier, enabling the integration of different semiconductor types without mutual interference.
2Reliability
If the insulating film has high hydrogen blocking performance, then hydrogen diffusion is suppressed, but the manufacturing process becomes more complex due to additional layer requirements
Solution Approach 1:
The patent specifies particular parameter ranges for the insulating film, including thickness between 50-500 nm and specific material compositions (such as silicon nitride, silicon oxide, or their combinations). By optimizing these parameters, the film achieves high hydrogen blocking performance while minimizing the increase in device complexity and maintaining compatibility with existing manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses hydrogen diffusion, enhances the reliability of thin film transistors, and allows for the simultaneous formation of top and bottom gate transistors with improved mobility and reduced manufacturing processes, suitable for high-luminosity display devices.
Implementation Method 1
hydrogen diffusion of which is lower than that of the first insulating film
Data Source
AI summary
A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.