Thin-Film Transistor Substrate With Hydrophobic Insulating Layer
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Solution Overview
Problem
The existing methods for manufacturing thin-film transistor substrates using a solution type semi-conductor pattern require a bank, which increases the thickness of the substrate and reduces reliability due to the thickness difference between the semi-conductor pattern and the bank, and the ink-jetting method is prone to spreading, necessitating additional processing steps.
Innovation Solution
A method involving a hydrophobic and hydrophilic insulating layer with a semi-conductor pattern formed by ink-jetting without a bank, where the semi-conductor pattern overlaps the source and drain electrodes and covers the gap between them, using a hydrophobic pattern on the exposed insulating layer to control ink placement and prevent spreading, thereby simplifying the manufacturing process and reducing substrate thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a bank is used to restrict ink movement during ink-jetting, then the ink can be contained on a particular area, but the substrate thickness increases and the reliability decreases due to thickness difference between semi-conductor pattern and bank
Solution Approach 1:
The insulating layer is divided into two regions with different surface properties: a hydrophobic first region and a hydrophilic second region. The hydrophobic region repels the ink solution to prevent spreading, while the hydrophilic region allows controlled ink deposition. This local differentiation of surface properties enables precise ink placement without requiring a bank structure, thereby maintaining substrate reliability.
2Manufacturing precision
If a bank is used to contain the ink, then the ink can be kept on a particular area, but the overall thickness of the display device increases
Solution Approach 1:
Instead of adding a bank structure that increases thickness, the patent modifies the surface properties of the insulating layer locally. The hydrophobic first region is formed by fluorine plasma treatment or fluorine ion implantation, creating a surface that repels ink solution. This approach confines the ink to the desired area using surface chemistry rather than physical barriers, avoiding any increase in substrate thickness.
3Ease of manufacture
If the ink is jetted onto a particular area, then the semi-conductor pattern can be formed, but the ink spreads from the particular area
Solution Approach 1:
The insulating layer is treated with fluorine plasma or fluorine ion implantation to create a hydrophobic first region with different surface energy characteristics. When the ink solution is jetted onto the substrate, it is repelled by the hydrophobic region and confined to the hydrophilic second region, preventing unwanted spreading and ensuring accurate pattern dimensional accuracy while maintaining the simplicity of the ink-jetting process.
4Ease of manufacture
If the thickness of semi-conductor pattern is much thinner than the bank, then the ink-jetting method can be used, but the reliability of the additional process is reduced
Solution Approach 1:
By creating a hydrophobic first region through fluorine plasma treatment or ion implantation, the patent provides a reliable mechanism to control ink deposition. The differential surface properties between the hydrophobic and hydrophilic regions ensure that the ink solution is confined to the intended area regardless of the thin semi-conductor pattern thickness, thereby maintaining high process reliability while enabling the use of the simple ink-jetting method.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the stable formation of a solution type semi-conductor pattern without a bank, simplifying the manufacturing process and preventing the increase in total substrate thickness, thereby enhancing the reliability and productivity of the thin-film transistor substrate.
Implementation Method 1
the first part having a hydrophobic property and the second part having a hydrophilic property
Implementation Method 2
the first part having a hydrophobic property and the second part having a hydrophilic property
Data Source
AI summary
A thin-film transistor substrate includes a gate line, and a gate electrode connected to the gate line, on a base substrate; an insulating layer on the gate electrode, the insulating layer including a first part and a second part, the first part having a hydrophobic property and the second part having a hydrophilic property; a data line extended in a different direction from the gate line, and a source electrode connected to the data line and on the second part of the insulating layer; a drain electrode on the second part of the insulating layer, the drain electrode spaced apart from the source electrode; a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes, where the semi-conductor pattern exposes the first part of the insulating layer; and a pixel electrode in contact with the drain electrode.