Thin Film Transistor Insulating Layer Light Absorption
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Solution Overview
Problem
Thin film transistors with top gate structures in display panels experience conductivity issues and threshold voltage shifts when irradiated with light, leading to unstable display control and quality due to light affecting the active layer's electrical properties.
Innovation Solution
A thin film transistor with an insulating layer comprising alternately stacked sub-insulating layers of different refractive indices, which absorbs non-perpendicularly incident light through destructive interference, preventing it from reaching the active layer and maintaining electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulating layer is used in the thin film transistor, then the device structure is simple, but light reaches the active layer causing conductivity issues and threshold voltage shifts
Solution Approach 1:
The insulating layer is divided into multiple sub-insulating layers with different refractive indexes arranged in alternating patterns. This segmentation allows the layer to absorb light through destructive interference while maintaining electrical insulation, resolving the contradiction between reliability and structural simplicity.
Solution Approach 2:
The insulating layer uses composite structure with multiple materials having different refractive indexes (e.g., silicon oxide and silicon nitride). This composite approach enables optical interference to prevent light from reaching the active layer, improving electrical stability without excessive complexity.
2Object-affected harmful factors
If the insulating layer uses multiple sub-insulating layers with different refractive indexes, then light absorption is improved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the optical parameter (refractive index) of the insulating layer by using multiple materials with different refractive indexes. This parameter change enables the layer to absorb light through interference, reducing light interference effects while the alternating pattern provides a manufacturable structure.
3Ease of manufacture
If a single-layer insulating structure is used, then manufacturing is simpler, but light reaches the active layer causing display instability
Solution Approach 1:
The patent converts the harmful effect of light into a beneficial one by using optical interference. The alternating sub-insulating layers with different refractive indexes create destructive interference for incoming light, preventing it from reaching the active layer. This converts the potential harm of light into a protective mechanism, improving display stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the electrical properties and stability of the thin film transistor, improving display stability and quality by effectively absorbing incident light and preventing threshold voltage shifts.
Implementation Method 1
absorbs non-perpendicularly incident light through destructive interference
Implementation Method 2
any two adjacent sub-insulating layers of the m insulating layers have different refractive indexes
Data Source
AI summary
A thin film transistor and its manufacturing method, a display panel, and a display device are provided. The thin film transistor includes an insulating layer on an active layer; the insulating layer includes m sub-insulating layers which are alternately stacked, and any two adjacent sub-insulating layers in the m sub-insulating layers have different refractive indexes, and m is an integer not less than 2.