Thin Film Transistor Insulating Spacer Leakage Current
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Solution Overview
Problem
Conventional methods for manufacturing thin film transistors result in excessively large leakage currents, affecting the characteristics of the devices.
Innovation Solution
A thin film transistor structure is developed with a substrate, gate electrode layer, insulating layer, semiconductor layer, conductor layer, insulating spacer layer, source-drain electrode layer, and passivation layer, where the insulating spacer layer is positioned between the source-drain electrode layer and the semiconductor layer to prevent direct contact and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source-drain electrode layer is directly connected with the semiconductor layer in conventional manufacturing methods, then the manufacturing process is simple, but the leakage current is excessively large
Solution Approach 1:
The patent introduces an insulating spacer layer as an intermediary component between the source-drain electrode layer and the semiconductor layer. This spacer layer physically separates the two conductive elements, preventing direct electrical contact and thereby reducing leakage current. The intermediary layer acts as a barrier that blocks unwanted current paths while maintaining the structural integrity of the thin film transistor.
Solution Approach 2:
The patent segments the direct contact interface between the source-drain electrode layer and semiconductor layer by inserting the insulating spacer layer. This segmentation divides what was previously a continuous conductive path into separate regions, with the insulating spacer creating distinct zones that prevent electrical leakage while allowing the device to function properly.
2Reliability
If an insulating spacer layer is added between the source-drain electrode layer and semiconductor layer, then leakage current is reduced, but the device structure becomes more complex
Solution Approach 1:
The insulating spacer layer serves multiple functions simultaneously: it provides electrical insulation to reduce leakage current, maintains physical separation between layers, and contributes to the overall structural stability of the thin film transistor. By making this single component multi-functional, the patent reduces the need for additional separate elements, thereby limiting the increase in device complexity.
3Reliability
If conventional manufacturing methods are used without an insulating spacer layer, then the manufacturing process is simple and fast, but the thin film transistor characteristics are degraded due to large leakage current
Solution Approach 1:
The insulating spacer layer is formed in advance during the manufacturing process, before the source-drain electrode layer is deposited. This preliminary action ensures that the insulation barrier is already in place to prevent leakage current from the beginning, rather than requiring additional correction steps later. The spacer layer is prepared as part of the standard fabrication sequence, minimizing its impact on manufacturing complexity.
Data Source
AI summary
The present application discloses a thin film transistor, a method for manufacturing a thin film transistor and a liquid crystal display panel, and relates to a display technology field. The thin film transistor includes a substrate, a gate electrode layer and an insulating layer, the gate electrode layer is formed on the substrate, the insulating layer is covered on the gate layer; a semiconductor layer is formed on the insulating layer; a conductor layer is formed on the semiconductor layer; an insulating spacer layer is formed on the insulating layer; a source-drain electrode layer is formed on the conductor layer and the insulating spacer layer; a passivation layer formed on the source-drain electrode layer and the semiconductor layer; wherein the insulating spacer layer is located between the source-drain electrode layer and the semiconductor layer to solve the leakage current too large problem of the thin film transistor.