Interlayer Insulating Stack for TFT Breakdown Resistance
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Solution Overview
Problem
In large-sized OLED display products, the thick interlayer insulating layer formed by silicon oxide layers is prone to breakdown due to high hardness and low dielectric constant, leading to instability and short circuits, affecting display performance.
Innovation Solution
A method involving the deposition of a silicon oxide layer and a silicon nitride layer with controlled hydrogen content, where the silicon nitride layer has a higher dielectric constant and lower hydrogen content than the silicon oxide layer, forming a double-layer or multi-layer structure to enhance stability and resistance to breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If a thick interlayer insulating layer is formed by depositing two silicon oxide layers, then the thickness requirement is met, but the layer is prone to breakdown due to high hardness and low dielectric constant
Solution Approach 1:
The patent applies composite materials by forming an interlayer insulating layer composed of multiple different inorganic materials (silicon oxide, silicon nitride, silicon oxynitride) with different dielectric constants and hardness properties. This composite structure combines the advantages of each material to achieve both sufficient thickness and high resistance to breakdown, resolving the contradiction between thickness and reliability.
Solution Approach 2:
The patent applies local quality by creating regions with different material compositions within the interlayer insulating layer. Specifically, it forms a first inorganic layer with higher dielectric constant and a second inorganic layer with lower dielectric constant, assigning different functional characteristics to different local regions to optimize both insulation performance and breakdown resistance.
2Length of stationary object
If a thick interlayer insulating layer is formed by depositing two silicon oxide layers, then the thickness requirement is met, but the layer exhibits high hardness leading to instability
Solution Approach 1:
The patent uses composite materials to reduce overall layer hardness while maintaining thickness. By incorporating silicon nitride and silicon oxynitride layers with lower hardness compared to pure silicon oxide, the composite interlayer insulating layer achieves both required thickness and improved stability, preventing the instability caused by excessive hardness.
3Reliability
If the interlayer insulating layer is made with high dielectric constant material, then insulation performance is improved, but hydrogen content increases affecting active layer stability
Solution Approach 1:
The patent applies local quality by creating a spatial distribution of different materials with varying hydrogen contents. The first inorganic layer with higher dielectric constant provides insulation performance, while the second inorganic layer with lower hydrogen content is positioned to protect the active layer from hydrogen diffusion, thus maintaining active layer stability while achieving good insulation.
Solution Approach 2:
The patent uses an intermediary approach by introducing a barrier layer (second inorganic layer with lower hydrogen content) between the high dielectric constant layer and the active layer. This intermediary layer prevents hydrogen from the high dielectric constant material from reaching and destabilizing the active layer, thus resolving the contradiction between insulation performance and active layer stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves the resistance to breakdown of the interlayer insulating layer, enhancing the yield and display effect of OLED products by reducing hydrogen content and maintaining low hardness, thus stabilizing the active layer.
Implementation Method 1
forming the silicon oxide layer with a first reaction gas and forming the silicon nitride layer with a second reaction gas
Data Source
AI summary
The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.