Thin Film Transistor Substrate With Integrated Gate-Active Layer
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Solution Overview
Problem
In high-density display devices, the limited space poses a challenge for ensuring a sufficient capacitor area due to the dense arrangement of thin film transistors, which affects the efficiency and stability of the oxide semiconductor thin film transistors compared to polycrystalline silicon transistors.
Innovation Solution
A thin film transistor substrate design where the active layer of one transistor is used as the gate electrode of another, optimizing space usage and enhancing capacitor area by integrating conductive material layers and oxide semiconductor materials, such as IZO-based, to form efficient and compact transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thin film transistors are densely arranged in high-quality and high-resolution display devices, then the display resolution and quality are improved, but the capacitor area becomes insufficient
Solution Approach 1:
The patent merges the gate electrode of the first thin film transistor with the active layer of the second thin film transistor, making them integrally formed. This merging eliminates the need for a separate gate electrode structure and reduces the overall space occupation, thereby ensuring sufficient capacitor area in high-density display devices while maintaining high display resolution
Solution Approach 2:
The active layer of the second thin film transistor serves dual functions: as the active layer for the second transistor's operation and as the gate electrode for the first thin film transistor. This multi-functionality reduces the number of separate components needed and optimizes space utilization in the display device
2Ease of manufacture
If oxide semiconductor is used as active layer material, then fabrication cost is reduced due to low temperature growth, but stability and electron mobility are not as desirable compared to polycrystalline silicon
Solution Approach 1:
The patent employs oxide semiconductor materials (such as IGZO, IZO, or InO) as the active layer material, which can be grown at relatively low temperatures during fabrication, reducing manufacturing costs. The patent accepts the trade-off that while oxide semiconductors have lower stability and electron mobility compared to polycrystalline silicon, the low-temperature fabrication process enables cost-effective manufacturing of thin film transistors
Data Source
AI summary
A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.