Thin-Film Transistor Internal Bridge for Compact Double-Gate Shielding
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Solution Overview
Problem
The existing thin film transistors with light shielding layers face challenges in efficiently arranging the light shielding layer, leading to increased area requirements and reduced driving stability, especially in transparent display apparatuses where oblique light can incident on the bezel portion.
Innovation Solution
A thin film transistor structure is introduced, featuring an internal bridge that penetrates the channel region and connects the gate electrode and the light shielding layer, thereby improving the arrangement efficiency and driving efficiency of the thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a light shielding layer is disposed in a thin film transistor to block light incident on the oxide semiconductor, then the driving stability is improved, but the area of the thin film transistor increases
Solution Approach 1:
The patent introduces an internal bridge structure that extends vertically through the channel region to connect the gate electrode and light shielding layer, utilizing the third dimension (depth) to achieve electrical connection without expanding the planar area. This allows the light shielding layer to be positioned directly over the channel region without requiring additional lateral space for external bridges or contact holes.
Solution Approach 2:
The internal bridge is nested within the channel region, penetrating through the active layer and gate insulating layer to establish connection between the gate electrode and light shielding layer. This nested configuration allows the connection structure to occupy the same planar footprint as the channel region itself, eliminating the need for separate external connection areas.
2Reliability
If a light shielding layer is disposed in the bezel portion of a transparent display apparatus to protect against oblique light, then the driving stability is improved, but the area and complexity of the structure increase
Solution Approach 1:
The internal bridge structure serves multiple functions simultaneously: it provides electrical connection between the gate electrode and light shielding layer, acts as a conductive path for applying voltage to the light shielding layer, and enables the light shielding layer to function as a second gate electrode. This multi-functionality reduces the need for separate structures and simplifies the overall device design.
Solution Approach 2:
The patent merges the light shielding layer with the gate electrode structure by electrically connecting them through the internal bridge, allowing the light shielding layer to be controlled as part of the gate system. This combining approach simplifies the structure by eliminating the need for separate control circuits and reduces the number of independent components required.
3Area of stationary object
If an internal bridge structure is used to connect the gate electrode and light shielding layer, then the arrangement efficiency is improved and area is reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The internal bridge structure is formed as an integrated part of the gate electrode formation process, where the bridge material is deposited and patterned together with the gate electrode. This preliminary formation of the connection structure during the main fabrication process reduces the need for subsequent alignment steps and minimizes cumulative positioning errors.
Solution Approach 2:
The internal bridge acts as an intermediary structure that is formed between the gate electrode and light shielding layer during the fabrication process. By using this intermediate structure as a reference for subsequent processing steps, the patent reduces alignment complexity and ensures precise positioning of the connection without requiring high-precision separate alignment operations.
Data Source
AI summary
A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.