Thin-Film Transistor Layout for Higher Mini LED Backlight Current
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Solution Overview
Problem
The low driving current of thin film transistor devices used in mini LED backlights results in reduced backlight intensity due to limited mobility, stability, or process accuracy, hindering the ability to provide sufficient current to mini LEDs.
Innovation Solution
A thin film transistor device design featuring a gate portion, source portion, active layer, drain portion, and conductor portion, where the active layer is located on the source portion, and the conductor portion extends to the drain portion, allowing for efficient current transmission and increased driving current, with optional features like a blocking portion and metal nanowires for enhanced conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional thin film transistor devices are used to drive mini LED backlight, then the device structure is simple, but the driving current is low resulting in reduced backlight intensity
Solution Approach 1:
The source electrode is divided into two separate electrodes: a first source electrode and a second source electrode. This segmentation allows current to flow through multiple parallel paths (first source electrode to active layer to drain, and second source electrode to conductor portion to drain), effectively increasing the total driving current capability of the transistor without complicating the overall device structure.
2Power
If the conductor portion extends directly to the drain portion, then the current transmission path is shortened, but the effective resistance increases
Solution Approach 1:
The conductor portion is positioned to extend from the second source electrode to the drain portion, creating a localized low-resistance current path. This local quality enhancement ensures that the conductor portion has optimized electrical properties (lower resistance) compared to other regions, allowing efficient current transmission while maintaining overall device reliability.
3Productivity
If the active layer is located on the source portion, then the current transmission efficiency is improved, but the device complexity increases
Solution Approach 1:
The active layer is merged with the source portion, specifically positioned on the first source electrode. This merging creates a direct interface between the source electrode and active layer, improving current injection efficiency and transmission. The combined structure reduces the number of separate components and interfaces, thereby maintaining structural simplicity while enhancing current transmission efficiency.
Data Source
AI summary
The present disclosure provides a thin film transistor device, a backlight module, and a display panel. The thin film transistor device includes a source portion, an active layer located on the source portion, a drain portion spaced apart from the source portion, and a conductor portion located on the active layer and extending to the drain portion. According to the present disclosure, the active layer is disposed on the source portion, and the drain portion is electrically connected to the active layer using the conductor portion, so that a current is transmitted from the drain portion to the active layer through the conductor portion.