Thin-Film Transistor Layout for Lower Gate Driver Heat
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Solution Overview
Problem
Existing display devices face challenges in reducing heat generation temperature in the gate driving circuit without increasing the size of the bezel.
Innovation Solution
A thin film transistor unit design with crossed heat sources, where thin film transistors are disposed diagonally and connected in a loop configuration to maintain distance between heat sources without increasing horizontal or vertical spacing, thereby reducing heat generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the distance between heat generation sources is increased horizontally or vertically, then the heat generation temperature is reduced, but the size of the bezel increases
Solution Approach 1:
The patent applies dimensionality change by transitioning from horizontal/vertical arrangement to diagonal arrangement of heat generation sources. The first and second heat generation sources are positioned diagonally rather than horizontally or vertically, which increases the effective distance between them while maintaining the same bezel area. This diagonal configuration allows heat sources to be farther apart in terms of thermal influence while occupying the same planar footprint, thus reducing heat generation temperature without increasing bezel size.
Solution Approach 2:
The patent employs asymmetry in the spatial arrangement of heat generation sources by using diagonal positioning instead of symmetric horizontal or vertical alignment. This asymmetric diagonal configuration optimizes the thermal separation between sources while maintaining compact overall dimensions, allowing one heat source to be positioned at an angle relative to the other, thereby increasing effective separation distance without expanding the bounding box of the device.
2Temperature
If the distance between heat generation sources is increased, then heat generation temperature is reduced, but the device size increases
Solution Approach 1:
The patent utilizes diagonal arrangement to increase the effective distance between heat generation sources without increasing the horizontal or vertical dimensions of the device. By positioning sources along a diagonal path rather than along horizontal or vertical axes, the thermal separation distance is maximized within the existing device footprint, thereby reducing heat generation temperature while maintaining compact device size.
Data Source
AI summary
A thin film transistor unit may include a first terminal; a first thin film transistor including a first active layer, a first gate electrode, a first source electrode, and a first drain electrode; a second thin film transistor including a second active layer, a second gate electrode, a second source electrode, and a second drain electrode; a third thin film transistor including a third active layer, a third gate electrode, a third source electrode, and a third drain electrode; a fourth thin film transistor including a fourth active layer, a fourth gate electrode, a fourth source electrode, and a fourth drain electrode; and a second terminal. A same gate voltage may be configured to be simultaneously applied to the first to fourth gate electrodes. The first terminal may be connected to the first and second drain electrodes. The second terminal may be connected to the third and fourth source electrode.