TFT Active-Layer Layout for Higher LCD Panel Resolution

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Solution Overview

Problem

Conventional liquid crystal display (LCD) panels have limited resolution due to minimum line width and line distance constraints, and there is no extra space for thin film transistors with two gate electrodes, making it difficult to achieve high resolution for virtual reality and augmented reality applications.

Innovation Solution

The design of a thin film transistor with an active layer comprising a first section extending along the data line, a second section extending along the data line, and a third section connecting these sections and extending along the scanning line, forming a single gate electrode, which reduces the size of the thin film transistor and allows for more flexible design, thereby improving resolution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a thin film transistor with two gate electrodes is used, then the transistor performance is improved, but the display panel resolution is limited due to increased space occupation

Engineering Contradiction:
Improvetransistor performanceVSAvoiddisplay panel resolution
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The active layer is divided into three distinct sections (first, second, and third sections) with different functions. The first section overlaps the data line for electrical connection, the second section extends along the data line, and the third section overlaps the scanning line to form the gate channel. This segmentation allows the transistor to achieve good performance with a single gate electrode, reducing space occupation while maintaining reliability.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If the minimum line width and line distance are reduced to improve resolution, then the display panel resolution is improved, but there is no extra space for thin film transistors with two gate electrodes

Engineering Contradiction:
Improvedisplay panel resolutionVSAvoidthin film transistor structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

One gate electrode structure is extracted/removed from the conventional two-gate transistor design. The invention achieves satisfactory transistor performance with only one gate electrode formed by the scanning line overlapping the third section of the active layer. This extraction reduces the space required for the transistor, enabling higher display panel resolution while maintaining acceptable device functionality.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If the third section length is increased to avoid short channel effect, then the transistor reliability is improved, but the display panel resolution is reduced due to larger transistor size

Engineering Contradiction:
Improvetransistor reliabilityVSAvoiddisplay panel resolution
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

Different sections of the active layer are designed with different local characteristics optimized for their specific functions. The third section (gate channel) has a length sufficient to avoid short channel effect and ensure reliability, while the first and second sections are configured to connect with data lines and extend along the data line direction. This local optimization allows the transistor to maintain reliability without unnecessarily increasing the overall footprint, preserving display resolution.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12105391B2Display panel and liquid crystal display device
Publication Date: 2024.10.01 WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
  • US12105391B2 patent drawing
  • US12105391B2 patent drawing
  • US12105391B2 patent drawing

AI summary

A display panel and a liquid crystal display device are provided by the present application. The display panel includes a thin film transistor, a data line, and a scanning line. The thin film transistor includes an active layer, and the active layer includes a first section extending along a length direction of the data line and overlapping the data line, wherein the first section is electrically connected to the data line; a second section extending along the length direction of the data line; and a third section connecting the first section and the second section and extending along a length direction of the scanning line and overlapping the scanning line.