TFT-LCD Array Substrate ESD Area Etching

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Solution Overview

Problem

During the manufacturing of TFT-LCD array substrates, the uneven thickness of resin layers in different areas leads to over-etching issues, particularly in the electrostatic discharge prevention area, causing damage to the data line and reducing product yield.

Innovation Solution

The solution involves forming specific through holes in the gate insulating layer and protection layer, with a passivation layer between transparent electrodes, to ensure consistent thickness and prevent over-etching, using a dry etching method with SF6, O2, and He gases, and incorporating a first transparent electrode that acts as a protective layer during etching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the protection layer is etched using a uniform process, then the etching is simple to perform, but the uneven thickness of the resin layer causes over-etching in the ESD prevention area and damage to the data line

Engineering Contradiction:
Improveetching process simplicityVSAvoiddata line integrity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by forming a first transparent electrode specifically in the ESD prevention area (area b) where the resin layer is thinnest. This local structural modification compensates for the uneven thickness, allowing the etching process to remove the protection layer uniformly without over-etching into the data line in the ESD area, while still achieving complete removal in areas with thicker resin layers.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the resin layer thickness is made uniform across all areas, then over-etching is prevented, but the planarization function is compromised and manufacturing complexity increases

Engineering Contradiction:
Improveetching uniformityVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The first transparent electrode acts as an intermediary layer in the ESD prevention area. It is positioned between the protection layer and the data line, providing additional thickness compensation that allows uniform etching parameters to be used across all areas while preventing over-etching damage to the underlying data line structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If the etching time is extended to accommodate the thickest areas, then complete etching is achieved, but the data line in the thinnest area is damaged by over-etching

Engineering Contradiction:
Improveetching completionVSAvoiddata line integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The first transparent electrode is formed in advance in the ESD prevention area before the protection layer etching process. This preliminary action creates a thickness buffer that prevents over-etching during the etching process, allowing the etching time to be sufficient for complete removal in thick areas without damaging the data line in thin areas.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures consistent thickness across areas, prevents data line damage, and enhances the manufacturing process by reducing defects and improving yield.

Implementation Method 1

the method further comprises: etching a first through hole in the gate insulating layer, etching a second through hole at a position of the protection layer corresponding to the first through hole

Methodology Applied
Scientific EffectDry etching:

Implementation Method 2

using a dry etching method with SF6, O2, and He gases

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentEP2755083B1Array substrate for a TFT-LCD and manufacturing method thereof
Publication Date: 2017.03.08 BOE TECHNOLOGY GROUP CO LTD
  • EP2755083B1 patent drawing
  • EP2755083B1 patent drawing
  • EP2755083B1 patent drawing

AI summary

Embodiments of the present invention disclose an array substrate comprising a peripheral wiring area which comprises an electrostatic discharge prevention area. The electrostatic discharge prevention area comprises a substrate (1) on which a gate line(2), a gate insulating layer (3), a data line (4), a protection layer (7) and a transparent electrode (9, 10) are formed. A first through hole (81) is formed in the gate insulating layer (3), a second through hole (82) is formed at the position of the protection layer (7) corresponding to the first through hole (81), and the gate line (2), the data line (4) and the transparent electrode (9, 10) are connected together through the first through hole (81) and the second through hole (82). The present invention also discloses a manufacturing method of the array substrate.