TFT-LCD Pixel Unit Gray Tone Mask Process

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Solution Overview

Problem

Conventional TFT-LCD manufacturing processes require strict process tolerance and multiple masks, leading to increased costs, machine occupation time, and reduced yield.

Innovation Solution

A three-mask photolithography process is used to form a TFT-LCD pixel unit, involving a gate line, gate electrode, active layer, doped layer, and insulating layers, with a lift-off process to reduce process complexity and improve yield, while using gray tone masks to form intercepting trenches and source/drain electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a five-mask or four-mask method is used to fabricate TFT LCD, then the manufacturing precision and reliability are improved, but the device complexity, manufacturing cost, and machine occupation time increase

Engineering Contradiction:
Improveetching precisionVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges the formation of intercepting trenches and source/drain electrodes into a single etching step using a gray tone mask. The gray tone mask enables simultaneous patterning of multiple features (intercepting trenches and source/drain electrodes) that were previously formed in separate steps, thereby reducing the total mask count from four or five to three masks while maintaining etching precision.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gray tone mask serves multiple functions: it defines both the intercepting trenches and the source/drain electrodes in a single exposure step. This multi-functional approach eliminates the need for separate masks for each feature, reducing process complexity while achieving the required manufacturing precision for both features.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Manufacturing precision

If a four-mask method with gray tone mask is used, then the manufacturing precision is improved, but the device complexity and manufacturing cost increase

Engineering Contradiction:
Improveetching uniformityVSAvoidprocess simplicity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent combines the formation of intercepting trenches and source/drain electrodes into a single etching step using the gray tone mask. This merging of operations maintains the etching uniformity and precision achieved by the gray tone method while simplifying the overall process by eliminating one mask step and reducing the total number of process steps.

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If strict process tolerance is maintained in conventional four-mask method, then the manufacturing precision is improved, but the productivity decreases

Engineering Contradiction:
Improveprocess control precisionVSAvoidyield
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

By merging the formation of intercepting trenches and source/drain electrodes into a single etching step with the gray tone mask, the patent reduces the number of process steps and associated variability. This consolidation maintains precise process control while reducing cumulative errors from multiple steps, thereby improving yield and productivity.

Inventive Principle:
Principle #5Merging (Combining)

4Manufacturing precision

If a five-mask or four-mask method is used, then the manufacturing precision is improved, but the machine occupation time increases

Engineering Contradiction:
Improvepattern formation precisionVSAvoidmachine occupation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent merges multiple patterning operations into a single mask step using the gray tone mask. This eliminates the need for separate mask alignment and etching steps for intercepting trenches and source/drain electrodes, significantly reducing machine occupation time while maintaining the precision required for pattern formation.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gray tone mask is designed and prepared in advance to simultaneously define both intercepting trenches and source/drain electrodes. This preliminary preparation of a multi-functional mask allows both features to be formed in a single exposure and etching step, reducing the total number of machine operations required.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The three-mask process reduces manufacturing costs, shortens machine occupation time, and increases yield by simplifying the design and improving process tolerance, while avoiding contact resistance issues with transparent metal electrodes.

Implementation Method 1

a coated photoresist layer is exposed with the first gray tone mask and developed to obtain a first photoresist pattern

Methodology Applied
Scientific EffectPhotochemical reaction: Photopolymerisation

Implementation Method 2

An ashing process is performed to partially remove the photoresist pattern and thus expose the channel portion

Methodology Applied
Scientific EffectThermal oxidation: Oxidation

Data Source

PatentUS7892897B2TFT-LCD pixel unit and method for manufacturing the same
Publication Date: 2011.02.22 BOE TECHNOLOGY GROUP CO LTD
  • US7892897B2 patent drawing
  • US7892897B2 patent drawing
  • US7892897B2 patent drawing

AI summary

A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.