Thin Film Transistor Light Blocking Layer for OLED Stability

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Solution Overview

Problem

Conventional thin film transistors in organic light-emitting diode display panels face challenges in operational stability due to light interference, which affects the performance and reliability of the devices.

Innovation Solution

A thin film transistor structure is developed with a light blocking layer and a specific electrode configuration, including a gate electrode, source electrode, and drain electrode, where the light blocking layer is positioned between the electrodes and made from an oxide of the same metal material as the electrodes, and conductor layers are formed on both sides of the active layer to enhance insulation and reduce light exposure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional thin film transistor structure is used, then the manufacturing process is simpler, but light interference affects operational stability

Engineering Contradiction:
Improveoperational stabilityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A light blocking layer is introduced as an intermediary component between the electrode layer and the active layer. This layer specifically blocks light from reaching the active layer, preventing light-induced operational instability while maintaining the overall transistor functionality. The light blocking layer acts as a mediator that isolates the active layer from harmful light exposure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The transistor structure is segmented into distinct functional layers: an electrode layer (comprising gate, source, and drain electrodes), a light blocking layer, and an active layer. This segmentation allows each layer to perform its specific function independently, with the light blocking layer specifically addressing light interference without affecting other transistor operations.

Inventive Principle:
Principle #1Segmentation

2Reliability

If the light blocking layer is added to block light interference, then operational stability improves, but manufacturing complexity increases

Engineering Contradiction:
Improveoperational stabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The light blocking layer is formed in the same layer structure as the electrode layer, combining the formation of multiple components into a single manufacturing process step. This merging approach reduces the total number of patterning steps required, as the light blocking layer and electrodes are created simultaneously rather than sequentially.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The light blocking layer serves multiple functions: it blocks light from reaching the active layer, provides structural support, and maintains electrical isolation between components. This multi-functionality reduces the need for additional specialized layers, simplifying the overall manufacturing process despite the added functionality.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Reliability

If conductor layers are added on both sides of the active layer, then insulation is enhanced and light exposure is reduced, but device complexity increases

Engineering Contradiction:
Improveinsulation performanceVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Conductor layers are added only in specific locations - on both sides of the active layer where electrical connection and insulation are most critical. This localized approach provides enhanced insulation and light blocking exactly where needed, without adding complexity to the entire device structure. The conductor layers are strategically positioned to address specific functional requirements.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10777683B2Thin film transistor, method of manufacturing thin film transistor, array substrate and display panel
Publication Date: 2020.09.15 HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
  • US10777683B2 patent drawing
  • US10777683B2 patent drawing
  • US10777683B2 patent drawing

AI summary

A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.